V048K015T801

Features: • 48V to 1.5V V•I Chip Converter• 80 A (120 A for 1 ms)• High density up to 320 A/in3• Small footprint 80 A/in2• Low weight 0.4 oz (12 g)• Pick & Place / SMD• >92% efficiency at 1.5V• 125 operation• 1 s transient respo...

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SeekIC No. : 004539477 Detail

V048K015T801: Features: • 48V to 1.5V V•I Chip Converter• 80 A (120 A for 1 ms)• High density up to 320 A/in3• Small footprint 80 A/in2• Low weight 0.4 oz (12 g)• Pick...

floor Price/Ceiling Price

Part Number:
V048K015T801
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/17

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Product Details

Description



Features:

• 48V to 1.5V V•I Chip Converter
• 80 A (120 A for 1 ms)
• High density up to 320 A/in3
• Small footprint 80 A/in2
• Low weight 0.4 oz (12 g)
• Pick & Place / SMD
• >92% efficiency at 1.5V
• 125 operation
• 1 s transient response
• >3.5 million hours MTBF
• No output filtering required
• V•I ChipBGA package



Application

In applications requiring higher current or redundancy, VTMs can be operated in parallel without adding control circuitry or signal lines. To maximize current sharing accuracy, it is imperative that the source and load impedance on each VTM in a parallel array be equal.

To achieve matched impedances, dedicated power planes within the PC board should be used for the output and output return paths to the array of paralleled VTMs. This technique is preferable to using traces of varying size and length.

The VTM power train and control architecture allow bi-directional power transfer when the VTM is operating within its specified ranges. Bi-directional power processing improves transient response in the event of an output load dump. The VTM may operate in reverse, returning output power back to the input source. It does so efficiently.




Pinout

  Connection Diagram


Specifications

Parameter
Values
Unit
Notes
 
+In to -In
-1.0 to 60.0
Vdc
+In to -In
100
Vdc
For 100 ms
PC to -In
-0.3 to 7.0
Vdc
TM to -In
-0.3 to 7.0
Vdc
SG to -In
500
mA
+Out to -Out
-0.5 to 5.0
Vdc
Isolation voltage
1500
Vdc
Input to Ouput
Operating junction temperature
-40 to 125
See note 2
Output current
80
A
Continuous
Peak output current
120
A
For 1 ms
Case temperature during reflow
208
Storage temperature
-40 to 150

Output power
144
W
Continuous
Peak output power
216
W
For 1 ms



Description

The V048K015T801 V•I Chip Voltage Transformation Module (VTM) breaks records for speed, density and efficiency to meet the demands of advanced DSP, FPGA, ASIC, processor cores and microprocessor applications at the point of load (POL) while providing isolation from input to output. It achieves a response time of less than 1 s and delivers up to 80A in a volume of less than 0.25 in3 while converting 48 V to 1.5 V with unprecedented efficiency. It may be paralleled to deliver hundreds of amps at an output voltage settable from 1.0 to 1.8 Vdc.

The V048K015T801's nominal output voltage is 1.5 Vdc from a 48 Vdc input factorized bus, Vf, and is controllable from 1.0 to 1.8 Vdc at no load, and from 0.9 V to 1.7 V at full load, over a Vf input range of 32 to 57.6 Vdc. The V048K015T801 can be operated either open- or closed-loop depending on the output regulation needs of the application. Operating open-loop, the output voltage tracks its Vf input voltage with a transformation ratio, K=1/32, and an output resistance, ROUT =1.3 milliohm, to enable applications requiring a programmable low output voltage at high current and high efficiency. Closing the loop back to an input Pre-Regulation Module (PRM) or DC-DC converter may be used to compensate for ROUT.

The V048K015T801 achieves break-through current density of 320 A/in3 in a V•I Chip package compatible with standard pick-and-place and surface mount assembly processes. The V•I Chip BGA package supports in-board mounting with a low profile of 0.16" (4mm) over the board. A J-lead package option supports on-board surface mounting with a profile of only 0.25" (6mm) over the board. The VTM's fast dynamic response and low noise eliminate the need for bulk capacitance at the load, substantially increasing the POL density while improving reliability and decreasing cost.




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