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V53C832L

Features: 256K x 32-bit organizationEDO Page Mode for a sustained data rate of 83 MHzRAS access time: 30, 35, 40 nsFourCAS Inputs for Byte Read and Byte Write ControlLow power dissipationRead-Modify-Write, RAS-Only Refresh,CAS-Before-RAS RefreshRefresh Interval: 512 cycles/8 msAvailable in 100-pin...

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SeekIC No. : 004539951 Detail

V53C832L: Features: 256K x 32-bit organizationEDO Page Mode for a sustained data rate of 83 MHzRAS access time: 30, 35, 40 nsFourCAS Inputs for Byte Read and Byte Write ControlLow power dissipationRead-Modify...

V53C832L Data Sheet

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Part Number:
V53C832L
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 256K x 32-bit organization
 EDO Page Mode for a sustained data rate of 83 MHz
 RAS access time: 30, 35, 40 ns
 Four CAS Inputs for Byte Read and Byte Write Control
 Low power dissipation
 Read-Modify-Write, RAS-Only Refresh,CAS-Before-RAS Refresh
 Refresh Interval: 512 cycles/8 ms
 Available in 100-pin PQFP and 100-pin LQFP packages
 Single +3.3V± 0.3V Power Supply
 TTL Interface


Pinout

Connection Diagram


Description

The V53C832L is a high speed 262,144 x 32 bit high performance CMOS dynamic random access memory. The V53C832L offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 12ns. All inputs are TTL compatible. Input and output capacitance is significantly lowered to increase performance and minimize loading. These features make the V53C832L ideally suited for a wide variety of high performance computer systems and peripheral applications.




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