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V54C316162VC

Features: JEDEC Standard 3.3V Power SupplyThe V54C316162VC is ideally suited for high performance graphics peripheral applicationsSingle Pulsed RAS InterfaceProgrammable CAS Latency: 2, 3All Inputs are sampled at the positive going edge of clockProgrammable Wrap Sequence: Sequential or InterleaveP...

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SeekIC No. : 004539957 Detail

V54C316162VC: Features: JEDEC Standard 3.3V Power SupplyThe V54C316162VC is ideally suited for high performance graphics peripheral applicationsSingle Pulsed RAS InterfaceProgrammable CAS Latency: 2, 3All Inputs ...

V54C316162VC Data Sheet

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Part Number:
V54C316162VC
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 JEDEC Standard 3.3V Power Supply
 The V54C316162VC is ideally suited for high performance graphics peripheral applications
 Single Pulsed RAS Interface
 Programmable CAS Latency: 2, 3
 All Inputs are sampled at the positive going edge of clock
 Programmable Wrap Sequence: Sequential or Interleave
 Programmable Burst Length: 1, 2, 4, 8 and Full Page for Sequential and 1, 2, 4, 8 for Interleave
 UDQM & LDQM for byte masking
 Auto & Self Refresh
 2K Refresh Cycles/32 ms
 Burst Read with Single Write Operation


Pinout

Connection Diagram


Specifications

Operating temperature range ............................................0 to 70 °C
Storage temperature range ......................................... -55 to 150 °C
Input/output voltage ........................................... -0.3 to (VCC+0.3) V
Power supply voltage ..................................................... -0.3 to 4.6 V
Power dissipation ........................................................................ 1 W
Data out current (short circuit) ................................................. 50 mA


Description

The V54C316162VC is a 16,777,216 bits synchronous high data rate DRAM organized as 2 x 524,288 words by 16 bits. The device is designed to comply with JEDEC standards set for synchronous DRAM products, both electrically and mechanically. Synchronous design allows precise cycle control  with the system clock. The CAS latency, burst length and burst sequence must be programmed into device prior to access operation.




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