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V80100P

Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Solder dip 260 °C, 40 s• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECApplicationFor use in high frequency...

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SeekIC No. : 004540371 Detail

V80100P: Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Solder dip 260 °C, 40 s•...

V80100P Data Sheet

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Part Number:
V80100P
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC




Application

For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.






Specifications

PARAMETER SYMBOL V60200PG UNIT
Maximum repetitive peak reverse voltage VRRM 100 V
Maximum average forward rectified current (Fig. 1)
per device
per diode		 IF(AV) 80
40		 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode		 IFSM 300 A
Peak repetitive reverse current per diode at tp = 2 s, 1 kHz IRRM 1.0 A
Voltage rate of change (rated VR) dV/dt 10000 V/s
Operating junction and storage temperature range TJ, TSTG - 40 to + 150





Description

V80100P datasheet




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