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VB40120C

Features: • Trench MOS Schottky Technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Meets MSL level 1, per J-STD-020C, LF max peak of 245 (for TO-263AB package)• Solder Dip 260 , 40 seconds (for TO-220 &...

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VB40120C: Features: • Trench MOS Schottky Technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Meets MSL level 1, per J-STD-...

VB40120C Data Sheet

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Part Number:
VB40120C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Trench MOS Schottky Technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020C, LF max peak of 245 (for TO-263AB package)
• Solder Dip 260 , 40 seconds (for TO-220 & TO-262 package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC




Specifications

PARAMETER
SYMBOL
V40120C
VB40120C
VI40120C
UNIT
Maximum repetitive peak reverse voltage
VRRM
120
V
Maximum average forward rectified current per device
(see Fig. 1) per diode
IF(AV)
40
20
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
250
A
Peak repetitive reverse current per diode at tp = 2 s, 1 kHz
IRRM
1.0
A
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 20 to + 150





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