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WTD9575

Features: ·Super High Dense Cell Design For Low RDS(ON) RDS(ON) <90m Ω@VGS =-10V·Simple Drive Requirement·Lower On-resistance·Fast Switching Characteristic·TO-252 Package·Super High Dense Cell Design For Low RDS(ON) RDS(ON) <90m Ω@VGS =-10V·Simple Drive Requirement·Lower On-resis...

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SeekIC No. : 004546926 Detail

WTD9575: Features: ·Super High Dense Cell Design For Low RDS(ON) RDS(ON) <90m Ω@VGS =-10V·Simple Drive Requirement·Lower On-resistance·Fast Switching Characteristic·TO-252 Package·Super High Dense C...

WTD9575 Data Sheet

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Part Number:
WTD9575
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Description



Features:

·Super High Dense Cell Design For Low RDS(ON) RDS(ON) <90m Ω@VGS =-10V
·Simple Drive Requirement
·Lower On-resistance
·Fast Switching Characteristic
·TO-252 Package



·Super High Dense Cell Design For Low RDS(ON) RDS(ON) <90m Ω@VGS =-10V
·Simple Drive Requirement
·Lower On-resistance
·Fast Switching Characteristic
·TO-252 Package








Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS ±25
Continuous Drain Current, (VGS@10V, TC=25)
, (VGS@10V, TC=100)		 ID -15
-9.5		 A
Pulsed Drain Current1 IDM -45
Total Power Dissipation(TC=25) PD 36 W
Maximum Thermal Resistace Junction-case RJC 3.5 /W
Maximum Thermal Resistace Junction-ambient RJA 110 /W
Operating Junction and Storage Temperature Range TJ,Tstg - 55~+150

Note: 1. Pulse width limited by safe operating area.
2. Pulse width 300s, duty cycle 2%.






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