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WTD9973

Features: *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <80m@VGS=10V*Simple D rive Requirement*Lower On-res istance*Fast Switching Characteristic*TO-252 PackageSpecifications Rating Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage ...

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WTD9973: Features: *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <80m@VGS=10V*Simple D rive Requirement*Lower On-res istance*Fast Switching Characteristic*TO-252 PackageSpecifications Rat...

WTD9973 Data Sheet

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Part Number:
WTD9973
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/22

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Product Details

Description



Features:

*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <80m@VGS=10V
*Simple D rive Requirement
*Lower On-res istance
*Fast Switching Characteristic
*TO-252 Package


Specifications

Rating
Symbol
Value
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
Continuous Drain Current, (VGS@10V, TC=25˚C)
                                        , (VGS@10V, TC=100˚C)
ID
14
9
A
Pulsed Drain Current1
IDM
40
Total Power Dissipation(TC=25˚C)
PD
27
W
Maximum Thermal Resistac e Junction-case
RJC
4.5
/W
Maximum Thermal Resistac e Junction-ambient
RJA
110
/W
Operating Junction and Storage Temperature Range
TJ,T stg
-55~+150



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