Features: ·Integrated LNA, LO Buffer, Image Reject Mixer·7x7 mm, QFN·+2.0 dBm LO Drive Level·2.7 dB Noise Figure·20.0 dB Image Rejection·100% RF, DC and Noise Figure TestingSpecifications Supply Voltage (Vd)Supply Current (Id1,Id2)Gate Bias Voltage (Vg)Input Power (RF Pin)Storage Temperature ...
XR1007-QD: Features: ·Integrated LNA, LO Buffer, Image Reject Mixer·7x7 mm, QFN·+2.0 dBm LO Drive Level·2.7 dB Noise Figure·20.0 dB Image Rejection·100% RF, DC and Noise Figure TestingSpecifications Suppl...
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| Supply Voltage (Vd) Supply Current (Id1,Id2) Gate Bias Voltage (Vg) Input Power (RF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) |
+5.0 VDC 200, 250 mA +0.3 VDC +17 dBm -65 to +165 -55 to MTTF Table3 MTTF Table3 |
Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
XR1007-QD Mimix Broadband's 10.0-18.0 GHz GaAs packaged receiver has a noise figure of 2.7 dB and 20.0 dB image rejection across the band. This XR1007-QD is a two stage balanced LNA followed by an image reject sub-harmonic anti-parallel diode mixer and includes an integrated LO buffer amplifer. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This XR1007-QD uses Mimix Broadband's 0.15 |ìm GaAs PHEMT device modetechnology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The device comes in a 7x7 mm QFN Surface Mount Laminate Package offering excellent RF and thermal properties and is RoHS compliant. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.