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ZXMC6A09DN8

Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• Motor drive• LCD backlightingPinoutSpecifications PARAMETER SYMBOL N-Channel P-Channel UNIT Drain-Source Voltage VDSS 60 ...

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SeekIC No. : 004552449 Detail

ZXMC6A09DN8: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• Motor drive• LCD backlightingPinout...

ZXMC6A09DN8 Data Sheet

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Part Number:
ZXMC6A09DN8
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Description



Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package


Application

• Motor drive
• LCD backlighting


Pinout

Connection Diagram


Specifications

PARAMETER SYMBOL N-Channel P-Channel UNIT
Drain-Source Voltage VDSS 60 -60 V
Gate Source Voltage VGS ± 20 ± 20 V
Continuous Drain Current@VGS=10V; TA=25°C (b)(d)
@VGS=10V; TA=70°C (b)(d)
@VGS=10V; TA=25°C (a)(d)
 ID 5.1
4.1
3.9		 -4.8
-3.8
-3.7		 A
Pulsed Drain Current (c) IDM 25.4 -23.8 A
Continuous Source Current (Body Diode) (b) IS 3.5 -3.3 A
Pulsed source current (body diode) (c) ISM 25.4 -23.8 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor		 PD 1.25
10		 W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor		 PD 1.8
14		 W
mW/°C
Power Dissipation at TA=25°C (d)
Linear Derating Factor		 PD 2.1
17		  
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C



Description

This new generation of trench MOSFETs ZXMC6A09DN8 from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.




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