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ZXMN6A09DN8

Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC - DC Converters• Power Management Functions• Disconnect switches• Motor controlPinoutSpecifications PARAMETER SYMB...

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ZXMN6A09DN8: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC - DC Converters• Power Managemen...

ZXMN6A09DN8 Data Sheet

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Part Number:
ZXMN6A09DN8
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package




Application

• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control




Pinout






Specifications

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS 60 V
Gate Source Voltage VGS ± 20 V
Continuous Drain CurrentVGS=4.5V; TA=25°C (b)(d)
VGS=4.5V; TA=70°C (b)(d)
TA=25°C (a)(d)
 ID 5.2
4.1
3.9		 A
Pulsed Drain Current (c) IDM 17.6 A
Continuous Source Current (Body Diode) (b) IS 3.5 A
Pulsed source current (body diode) (c) ISM 15 A
Power Dissipation at TA=25°C (a) (d)
Linear Derating Factor		 PD 1.25
10		 W
mW/°C
Power Dissipation at TA=25°C (a) (e)
Linear Derating Factor		 PD 1.81
14.5		 W
mW/°C
Power Dissipation at TA=25°C (b) (d)
Linear Derating Factor		 PD 2.16
17.3		 W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C





Description

This new generation of TRENCH MOSFETs ZXMN6A09DN8 from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.






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