Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• SOT223 packageApplication• DC-DC converters• Power management functions• Disconnect switches• Motor control• Class D audio output stagesPinoutSpecificatio...
ZXMN7A11G: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• SOT223 packageApplication• DC-DC converters• Power management functions&...
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| Parameter |
Symbol |
IRLR8103V |
Unit |
| Drain-Source Voltage |
VDSS |
70 |
V |
| Gate-Source Voltage |
VGSS |
±20 |
V |
| Continuous drain current @ VGS=10V; TA=25(b) @ VGS=10V; TA=70(b) @ VGS=10V; TA=25(a) |
ID |
3.8 3.0 2.7 |
A A A |
| Pulsed drain current(c) |
IDM |
10 |
A |
| Continuous source current (body diode)(b) |
IS |
5 |
A |
| Pulsed source current (body diode)(c) |
ISM |
10 |
A |
| Power dissipation at TA =25 (a) Linear derating factor |
PD |
2 16 |
W mW/ |
| Power dissipation at TA =25(b) Linear derating factor |
PD |
3.9 31 |
W mW/ |
| Operating Junction and Storage Temperature Range |
TJ, TSTG |
-55 to +150 |
This new generation of trench MOSFETs ZXMN7A11G from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.