Features: • Very low saturation voltage• High gain• High forward blocking voltage• Low profile high dissipation packageApplication• MOSFET and IGBT gate driving• LED driving• Strobe flash• Motor drive• Micro buffersSpecifications Paramet...
ZXTN19020DFF: Features: • Very low saturation voltage• High gain• High forward blocking voltage• Low profile high dissipation packageApplication• MOSFET and IGBT gate driving• ...
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Parameter |
Symbol |
Limit |
Unit |
Collector-base voltage |
VCBO |
70 |
V |
Collector-emitter voltage (forward blocking) |
VCEX |
70 |
V |
Collector-emitter voltage (base open) |
VCEO |
20 |
V |
Emitter-collector voltage (reverse blocking) |
VECO |
4.5 |
V |
Emitter-base voltage |
VEBO |
7 |
V |
Continuous collector current(c) |
IC |
6.5 |
A |
Base current |
IB |
1 |
A |
Peak pulse current |
ICM |
15 |
A |
Power dissipation at Tamb =25(a) Linear derating factor |
PD |
0.84 6.72 |
W mW/ |
Power dissipation at Tamb =25(b) Linear derating factor |
PD |
1.34 10.72 |
W mW/ |
Power dissipation at Tamb =25(c) Linear derating factor |
PD |
1.5 12.0 |
W mW/ |
Power dissipation at Tamb =25(d) Linear derating factor |
PD |
2.0 16.0 |
W mW/ |
Operating and storage temperature range |
Tj, Tstg |
- 55 to 150 |
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b)Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air onditions.
(d)As (c) above measured at t<5secs.
Advanced process capability ZXTN19020DFF has been used to maximize the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance.