2N5306

Transistor Polarity : NPN
Mounting Style : Through Hole
Configuration : Single
Maximum Operating Temperature : + 150 C
Maximum Collector Cut-off Current : 0.1 uA
Power Dissipation : 625 mW
Package / Case : TO-92
Emitter- Base Voltage VEBO : 12 V
Maximum DC Collector Current : 0.3 A
Packaging : Box
Collector- Emitter Voltage VCEO Max : 25 V
Collector- Base Voltage VCBO : 25 V


Features:

• This device is designed for applications requiring extremely high
   current gain at currents to 1.0A.
• Sourced from process 05.
• See MPSA14 for characteristics


Specifications

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-base voltage	25	V
VCEO	Collector-emitter voltage	25	V
VEBO	Emitter-base voltage	12	V
IC	Collector Current-Continuous	1.2	A
Tj	Junction temperature	-55~150
TSTG	Storage temperature	-55~150

NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.


Parameters:

Technical/Catalog Information	2N5306
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	25V
Current - Collector (Ic) (Max)	1.2A
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	7000 @ 2mA, 5V
Vce Saturation (Max) @ Ib, Ic	1.4V @ 200A, 200mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N5306 2N5306