2N6036

Power Dissipation :
Mounting Style : SMD/SMT
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 80 V
Collector- Base Voltage VCBO : 80 V
Packaging : Tube
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 4 A
Maximum Operating Temperature : + 150 C
Maximum Collector Cut-off Current : 100 uA
Package / Case : SOT-32


Features:

·With TO-126 package
·Complement to type 2N6037/6038/6039
·DARLINGTON
·High DC current gain




Application

·Designed for general-purpose amplifier nd low-speed switching applications




Specifications

SYMBOL	PARAMETER		CONDITIONS	VALUE	UNIT
VCBO	Collector-base voltage	2N6034	Open emitter	-40 -60 -80	V
		2N6035
		2N606
VCEO	Collector -emitter voltage	2N6034	Open base	-40 -60 -80	V
		2N6035
		2N6036
VEBO	Emitter-base voltage		Open collector	-5	V
IC	Collector current			-4	A
ICM	Collector current-Pulse			-8	A
IB	Base current			-0.1	A
PD	Collector power dissipation		TC=25	40	W
Tj	Junction temperature			150
Tstg	Storage temperature			-65~150

Parameters:

Technical/Catalog Information	2N6036
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	PNP - Darlington
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	4A
Power - Max	40W
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 2A, 3V
Vce Saturation (Max) @ Ib, Ic	3V @ 40mA, 4A
Frequency - Transition	-
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	SOT-32-3, TO-126-3
Packaging	Tube
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N6036 2N6036 497 2540 5 ND 49725405ND 497-2540-5