2N7002

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 1.2 Ohms
Continuous Drain Current : 0.12 A


Features:

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-Channel devices

 

Application


Motor controls
Converters
Amplifi ers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,memories, displays, bipolar transistors, etc.)

 

Pinout






Specifications

Parameter Value
DRAIN to SOURCE voltage BV_DSS
DRAIN to GATE voltage BV_DGS
GATE to SOURCE voltage ±30V
Operating and storage temperature-55 to +150
Soldering temperature1+300

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. Allvoltages are referenced to device ground.

Notes:
1. Distance of 1.6mm from case for 10 seconds.

Part Number	2N7002
Config/ Polarity	N
PD (W)	0.35
VDSS (V)	60
VGSS (+/-) (V)	20
ID (A)	0.115
RDS(on) Max () @ VGS; 1.8V
RDS(on) Max () @ VGS; 2.5V
RDS(on) Max () @ VGS; 4.0V
RDS(on) Max () @ VGS; 4.5V
RDS(on) Max () @ VGS; 5V	7.5
RDS(on) Max () @ VGS; 10.0V
VGS(th) (V)	2.5
Ciss (typ) (pF)	22
Qg (typ) (nC) @ VGS; 4.5V
Qg (typ) (nC) @ VGS; 5V
Qg (typ) (nC) @ VGS; 10V

Description

The 2N7002 is a kind of DMOS N-channel transistor.It is available in SOT-23 plastic package.

The following is features of 2N7002.(1) high input impedance; (2) high-speed switching; (3) no minority carrier storage time; (4) CMOS logic compatible input; (5) no minority carrier storage time; (6) CMOS logic compatible input; (7) no thermal runaway; (8) no secondary breakdown.

Then is about the absolute maximum ratings of 2N7002 at TA is 25.(1): drain-source voltage(VDSS) is 60 V; (2): drain-gate voltage(VDGS) is 60 V; (3): pulsed gate-source-voltage(VGS) is ±20 V; (4): continuous drain current(ID) is 250 mA; (5): power dissipation at TC is 50(Ptot) is 0.310 W; (6): junction temperature(Tj) is 150; (7): storage temperature(Ts) ranges from -55 to 150; (8): continuous maximum forward current(IF) is 0.3 A; (9): typical forward drop(VF) is 0.85 V; (10): drain cutoff current is 0.5A at VDS is 25 V, VGS is 0; (11): input capacitance of 2N7002 is 60 pF at VDS is 10 V, VGS is 0,f is 1 MHz; (12): typical gate threshold voltage is 2 V at VGS is VDS,ID is 1 mA and the maximum is 2.5 V.

Parameters:

Technical/Catalog Information	2N7002
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	200mA
Rds On (Max) @ Id, Vgs	5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	43pF @ 25V
Power - Max	350mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	2nC @ 5V
Package / Case	SOT-23-3
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N7002 2N7002 497 3111 1 ND 49731111ND 497-3111-1