HGTP3N60C3D

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Packaging :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220AB-3


Features:

• 6A, 600V at TC = +25
• 600V Switching SOA Capability
• Typical Fall Time - 130ns at TJ = +150
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode


Specifications

                                                                                                                         UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CES            600           V
Collector Current Continuous
At T_C = +25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . .  I_C25            6                A
At T_C = +110. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110           3               A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . .  . . . . I_CM           24              A         
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GES         ±20            V
Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM        ±30           V
Switching Safe Operating Area at T_J = +150, Fig. 14. . . .   .   .   .  . . SSOA    18A at 480    V
Power Dissipation Total at T_C = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . PD           33           W
Power Dissipation Derating T_C > +25. . . . . . . . . . . . . . . . . . . . . . . . . .              0.27          W/
Operating and Storage Junction Temperature Range . . . . . T_J, T_STG               -40 to +150      
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . .  . . . . . . T_L       260                
Short Circuit Withstand Time (Note 2) at V_GE = 10V, Fig 6 . . . . . . . . . . . . .t_SC     8                   s

NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V_CE(PK) = 360V, T_J = +125, R_GE = 82W.

Description

The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These  HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS  devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25 and +150. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055.

The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS  IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.