Features: Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and CurrentApplicationHigh frequency DC-DC convertersSpecifications Characteristic Param...
IRFR3518: Features: Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Vo...
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
Characteristic | Parameter | Max. | Unit |
ID @ TC = 25 ID @ TC = 100 IDM |
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current |
38 27 150 |
A |
PD @TC = 25 PD @ TC = 100 |
Maximum Power Dissipation Maximum Power Dissipation |
110 40 |
W |
dv/dt |
Linear Derating Factor Peak Diode Recovery dv/dt |
0.71 5.2 |
W/ V/ns |
VDS VGS |
Drain-to-Source Voltage Gate-to-Source Voltage |
80 ± 20 |
V |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |