Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: TO-220FP
Gate-Source Breakdown Voltage
: +/- 30 V
Resistance Drain-Source RDS (on)
: 1.8 Ohms
Drain-Source Breakdown Voltage
: 800 V
Continuous Drain Current
: 5.2 A
Features: Extremely high dv/dt capability
100% avalange tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatibility,
Extremely high dv/dt capability
100% avalange tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatibility,
Application Switching application,
Specifications
| Symbol |
Parameter |
Value
|
Unit |
|
TO-220 / D²PAK
I²PAK |
TO-220FP |
VDS
VGS |
Drain-source voltage (VGS = 0)
Gate- source voltage |
800
± 30 |
V
V |
ID
ID
IDM(2)
PTOT |
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor |
5.2
3.3
20.8
125
1 |
5.2 (1)
3.3 (1)
20.8(1)
30
0.24 |
A
A
A
W
W/°C |
VESD(G-S)
dv/dt
(3) |
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
Peak diode recovery voltage slope |
4000
4.5 |
V
V/ns |
| VISO |
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s; Tc= 25°C) |
-- |
2500 |
V |
Tj
Tstg |
Max operating junction temperature
Storage temperature |
-55 to 150 |
°C
°C |
,
| Symbol |
Parameter |
Value
|
Unit |
|
TO-220 / D²PAK
I²PAK |
TO-220FP |
VDS
VGS |
Drain-source voltage (VGS = 0)
Gate- source voltage |
800
± 30 |
V
V |
ID
ID
IDM(2)
PTOT |
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor |
5.2
3.3
20.8
125
1 |
5.2 (1)
3.3 (1)
20.8(1)
30
0.24 |
A
A
A
W
W/°C |
VESD(G-S)
dv/dt
(3) |
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
Peak diode recovery voltage slope |
4000
4.5 |
V
V/ns |
| VISO |
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s; Tc= 25°C) |
-- |
2500 |
V |
Tj
Tstg |
Max operating junction temperature
Storage temperature |
-55 to 150 |
°C
°C |
,
DescriptionThe SuperMESH™ series STP7NK80ZFP is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.
,
Parameters: | Technical/Catalog Information | STP7NK80ZFP |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 5.2A |
| Rds On (Max) @ Id, Vgs | 1.8 Ohm @ 2.6A, 10V |
| Input Capacitance (Ciss) @ Vds | 1138pF @ 25V |
| Power - Max | 30W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 56nC @ 10V |
| Package / Case | TO-220FP |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP7NK80ZFP
STP7NK80ZFP
|
STP7NK80ZFP Data Sheet
