FDN336P

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Resistance Drain-Source RDS (on) : 0.2 Ohms
Package / Case : SuperSOT
Continuous Drain Current : - 1.3 A


Features:

-1.3 A, -20 V. R_DS(ON)= 0.20 @ V_GS = -4.5 V
R _DS(ON) = 0.27 @ V_GS = -2.5 V.

Low gate charge (3.6 nC typical).
High performance trench technology for extremely low R _DS(ON)
High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability.




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	±8	V
ID	Drain Current - Continuous - Pulsed	-1.3	A
		-10
PD	Power Dissipation for Single Operation (Note 1a) (Note 1b)	0.5	W
		0.46
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150

Description

This FDN336P P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices FDN336P are well suited for portable electronics applications: load switching and power management,battery charging circuits, and DC/DC conversion.

FDN336P is a kind of single P-Channel 2.5 V specified PowerTrenchTM MOSFET. The device is intended for portable electronics applications such as load switching and power management, battery charging circuits, and DC/DC conversion.

There are some features of FDN336P as follows. (1)-1.3 A, -20 V. RDS(ON)=0.20 @ VGS=-4.5 V and RDS(ON)=0.27 @ VGS=-2.5 V. (2)Low gate charge (3.6 nC typical). (3)High performance trench technology for extremely low RDS(ON). (4)High power version of industry standard SOT-23 package.Identical pin out to SOT-23 with 30% higher power handling capability.

The following is about the absolute maximum ratings of FDN336P at TA=25 unless other wise noted. (1)The VDSS (Drain-Source Voltage) is -20 V. (2)The VGSS (Gate-Source Voltage) is ±8 V. (3)The ID (Drain Current - Continuous) is -1.3 A and the ID (Drain Current - Pulsed) is -10 A. (4)The TJ,TSTG (Operating and Storage Temperature Range) is from -55 to +150. (5)The RJA (Thermal Resistance, Junction-to-Ambient) is 250 /W. (6)The RJC (Thermal Resistance, Junction-to-Case) is 75/W.

Parameters:

Technical/Catalog Information	FDN336P
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	1.3A
Rds On (Max) @ Id, Vgs	200 mOhm @ 1.3A, 4.5V
Input Capacitance (Ciss) @ Vds	330pF @ 10V
Power - Max	460mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	5nC @ 4.5V
Package / Case	SSOT-3
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDN336P FDN336P FDN336PDKR ND FDN336PDKRND FDN336PDKR