bq2204A

Features:

Power monitoring and switching for 3-volt battery-backup applica- tions
Write-protectcontrol
2-input decoder for control of up to4banksofSRAM
3-voltprimarycellinputs 
Less than 10ns chip-enable propagationdelay
5%or10%supplyoperation


Pinout




Specifications

Symbol	Parameter	Value	Unit	Conditions
VCC	DC voltage applied on VCC relative to VSS	-0.3 to +7.0	V
VT	DC voltage applied on any pin excluding VCC relative to VSS	-0.3 to +7.0	V	VT VCC +0.3
TOPR	Operating temperature	0 to 70	°C	Commercial
		-40 to +85	°C	Industrial"N"
TSTG	Storage temperature	-55 to +125	°C
TBIAS	Temperature under bias	-40 to +85	°C
TSOLDER	Soldering temperature	260	°C	For 10 seconds
IOUT	VOUT current	200	mA

Description

The CMOS bq2204A SRAM Non- volatile Controller Unit provides all necessary functions for converting up to four banks of standard CMOS SRAM into nonvolatile read/write memory.

A precision comparator monitors of bq2204A the 5V VCC input for an out-of-tolerance condi- tion. When out-of-tolerance is detected, the four conditioned chip-enable outputs are forced inactive to write-protect up to four banks of SRAM.