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2N7002W, 2N7002W-7, 2N7002W-7-F

Table of contents:
Info of 2N7002W
Info of 2N7002W-7
Info of 2N7002W-7-F

2N7002W, 2N7002W-7, 2N7002W-7-F Selling Leads, Datasheet

MFG:Diodes Inc (VA) Category:Discrete Semiconductor Products Package Cooled:SOT-323 D/C:09+/10+

2N7002W, 2N7002W-7, 2N7002W-7-F Datasheet download

Five Points

Part Number: 2N7002W

Category: Discrete Semiconductor Products

MFG: Diodes Inc (VA)

Package Cooled: SOT-323

D/C: 09+/10+

Description: MOSFET N-CHANNEL 60V SOT323

Price Break

3000
6000
12000

Unit Price

.07500
.06750
.06000

Extended Price

225.00
405.00
720.00

(All prices are in USD) Prices for reference only

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2N7002W Parameters

Technical/Catalog Information	2N7002W
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	115mA
Rds On (Max) @ Id, Vgs	7.5 Ohm @ 50mA, 5V
Input Capacitance (Ciss) @ Vds	50pF @ 25V
Power - Max	200mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	-
Package / Case	SOT-323
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N7002W 2N7002W 2N7002WTR ND 2N7002WTRND 2N7002WTR

2N7002W Maximum Ratings

Part Number	2N7002W
Config/ Polarity	N
P_D (W)	0.2
V_DSS (V)	60
V_GSS(+/-) (V)	20
I_D (A)	0.115
R_{DS(on) Max}(Ω) @ V_GS; 1.8V
R_{DS(on) Max}(Ω) @ V_GS; 2.5V
R_{DS(on) Max}(Ω) @ V_GS; 4.0V
R_{DS(on) Max}(Ω) @ V_GS; 4.5V
R_{DS(on) Max}(Ω) @ V_GS; 5V	7.5
R_{DS(on) Max}(Ω) @ V_GS; 10.0V
V_GS(th) (V)	2
C_iss (typ) (pF)	22
Qg (typ) (nC) @ V_GS;4.5V
Qg (typ) (nC) @ V_GS;5V
Qg (typ) (nC) @ V_GS;10V

2N7002W-7 Parameters

Technical/Catalog Information	2N7002W-7
Vendor	Diodes Inc
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	115mA
Rds On (Max) @ Id, Vgs	7.5 Ohm @ 50mA, 5V
Input Capacitance (Ciss) @ Vds	50pF @ 25V
Power - Max	200mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	-
Package / Case	SOT-323
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N7002W 7 2N7002W7 2N7002WDITR ND 2N7002WDITRND 2N7002WDITR

2N7002W-7-F Parameters

Technical/Catalog Information	2N7002W-7-F
Vendor	Diodes Inc (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	115mA
Rds On (Max) @ Id, Vgs	7.5 Ohm @ 50mA, 5V
Input Capacitance (Ciss) @ Vds	50pF @ 25V
Power - Max	200mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	-
Package / Case	SOT-323
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N7002W 7 F 2N7002W7F 2N7002W FDIDKR ND 2N7002WFDIDKRND 2N7002W-FDIDKR

2N7002W-7-F General Description

The 2N7002W-7-F is a type of N-channel enhancement mode fifled effect transistor.

Features of the 2N7002W-7-F are:(1)low on-resistance;(2)low gate threshold voltage;(3)low input capacitance;(4)fa st switching speed;(5)low input/output leakage;(6)ultra-small surface mount package;(7)lead free/RoHS compliant (No purposefully added lead).

The absolute maximum ratings and electrical characteristics(TA = 25)of the 2N7002W-7-F can be summarized as:(1):drain-source voltage is 60 V;(2):drain-gate voltage is 60 V when Rgs is 1.0M or less than 1.0M;(3):gate-sour ce voltage(continuous) is ±20V;(4):drain current(Continuous) is 115mA; (5):total power dissipation is 200mW when Derating above TA is 25°C ;(6):thermal resistance, junction to ambient is 625 K/W;(7):operating and storage temp erature Ranges from -55°C to +150°C.Electrical characteristics:(1)drain-source breakdown voltage is 60V min and 70V max when VGS is 0V and ID is 10uA;(2):gate-body leakage is±10 nA max when VGS is±20V and VDS is 0V;(3): gate threshold voltage is 1.0V min and 2.0 V max when VDS is VGS and ID is 250uA;(4):input capacitance is 22pF typ and 50 pF max when VDS is 25V, VGS is 0V and f is 1.0MHz;(5):turn-on delay time tD(ON) is 7.0ns typ and 20ns max when VDD is 30V, ID is 0.2A,RL is 150, VGEN is 10V and RGEN is 25.etc.

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