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The Supertex 2N7008 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coeffi cient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
2N7008 Maximum Ratings
Parameter Value DRAIN to SOURCE voltage BVDSS DRAIN to GATE voltage BVDGS GATE to SOURCE voltage ±30V Operating and storage temperature -55 to +150 Soldering temperature1 +300
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.
Note 1. Distance of 1.6mm from case for 10 seconds.
2N7008 Features
►Free from secondary breakdown ►Low power drive requirement ►Ease of paralleling ►Low CISS and fast switching speeds ►Excellent thermal stability ►Integral SOURCE-DRAIN diode ►High input impedance and high gain ►Complementary N- and P-Channel devices