BLV862, BLV897, BLV90 Selling Leads, Datasheet
MFG:PHILIPS D/C:09+
BLV862, BLV897, BLV90
- Table of contents:
Info of BLV862
Info of BLV897
Info of BLV90
Attentive hint
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
Top Sellers:
TOP
About BLV862
PDF/DataSheet Download
Datasheet: BLV862
File Size: 91350 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLV897
PDF/DataSheet Download
Datasheet: BLV897
File Size: 103804 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLV90
PDF/DataSheet Download
Datasheet: BLV90
File Size: 55464 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BLV862 General Description
The BLV862 is designed as one kind of UHF linear push-pull power transistor which produced by Philips Semiconductors with three features:(1)gold metallization ensures excellent reliability;(2)polysilicon emitter ballasting resistors for an optimum temperature profile;(3)double stage internal input and output matching networks for an optimum wideband capability and high gain.It can be used in common emitter class-AB operation in output stages in bands 4 and 5 (470 to 860 MHz) television transmitter amplifiers (vision or sound).
And the BLV862 has two sections in push-pull configuration.The device is encapsulated in a SOT262B 4-lead rectangular flange package,with two ceramic caps.The absolute maximum rating can be summarized as:(1)collector-base voltage:65 V;(2)collector-emitter voltage:30 V;(3)emitter-base voltage:3 V;(4)collector current (DC):25 A;(5)total power dissipation:350 W;(6)storage temperature:-65 +150°C;(7)operating junction temperature:200 °C;(8)thermal resistance from junction to mounting base:0.5 K/W;(9)thermal resistance from mounting base to heatsink:0.15 K/W.Note:thermal resistance is determined under specified RF operating conditions.If you want to know more information such as the electrical characteristics about the BLV862,please download the datasheet in www.seekdatasheet.com .
BLV897 General Description
NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap. The common emitters are connected to the flange.
BLV897 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | 70 | V | |
| VCES | collector-emitter voltage | open base | 30 | V | |
| VEBO | emitter-base voltage | open collector | 3 | V | |
| IC | collector current | DC or average value | 5 | A | |
| ICM | collector current | peak value f > 1 MHz | 5 | A | |
| Ptot | total power dissipation | f > 1 MHz;Ts = 103 °C (note 1) |
97 | W | |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | operating junction temperature | 200 |
BLV897 Features
* Internal input matching for an optimum wideband capability and high gain
* Polysilicon emitter ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.
* Polysilicon emitter ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.
BLV897 Typical Application
* Common emitter class-AB operation in base stations in the 800 to 960 MHz frequency band.
BLV897 Connection Diagram
BLV90 General Description
NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band.
BLV90 Maximum Ratings
| Collector-base voltage (open emitter)peak value | VCBSM | max. | 36v | ||
| Collector-emitter voltage (open base) | Vceo | max. | 16v | ||
| Emitter-base voltage (open collector) | Vebo | max. | 3v | ||
| Collector current | |||||
| d.c. or average | IC,IC(AV) | max. | 0.2 A | ||
| (peak value); f > 1 MHz | ICM | max. | 0.6 A | ||
| Total power dissipation | |||||
| f > 1 MHz; Tmb = 25 °C | Ptot (r.f.) | max. | 3.5 W | ||
| Storage temperature | Tstg | -65 to , 150 °C | |||
| Operating junction temperature | Tj | max. | 200 °C | ||
BLV90 Features
* diffused emitter-ballasting resistors for an optimum temperature profile.
* gold metallization ensures excellent reliability.
* the device can be applied at rated output power without an external heatsink when it is mounted on a printed-circuit board (see Fig.6).
* gold metallization ensures excellent reliability.
* the device can be applied at rated output power without an external heatsink when it is mounted on a printed-circuit board (see Fig.6).
BLV90 Connection Diagram
MT58L64L18CT-10
Price: 4-6 USD
MT58L64L18CT-10 TQFP100
DL-7140-211M
Price: 5-6.5 USD
DL-7140-211M laser tube
74LVC74APG
Price: 4-5 USD
74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2
Price: 6.5-8 USD
CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX
Price: 0.284-0.286 USD
PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2
Price: 1-2 USD
IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB
Price: 1-2 USD
a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1
Price: 0.124-0.2 USD
PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L
Price: 0.177-0.178 USD
RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A
Price: 0.053-0.055 USD
STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013
Price: 1.45-1.5 USD
STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B
Price: 0.073-0.075 USD
SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components
