BLV100, BLV101, BLV1019-4 Selling Leads, Datasheet
MFG:PHILIPS D/C:94+
BLV100, BLV101, BLV1019-4 Datasheet download
Part Number: BLV100
MFG: PHILIPS
Package Cooled:
D/C: 94+
BLV100, BLV101, BLV1019-4
- Table of contents:
Info of BLV100
Info of BLV101
Info of BLV1019-4
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About BLV100
PDF/DataSheet Download
Datasheet: BLV100
File Size: 65053 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLV10
PDF/DataSheet Download
Datasheet: BLV10
File Size: 83514 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLV10
PDF/DataSheet Download
Datasheet: BLV10
File Size: 83514 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BLV100 General Description
NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band. The transistor has a 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange.
BLV100 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | 50 | V | |
| VCES | collector-emitter voltage | open base | 30 | V | |
| VEBO | emitter-base voltage | open collector | 4 | V | |
| IC | collector current | DC or average value | 2.25 | A | |
| ICM | collector current | peak value f > 1 MHz | 3.5 | A | |
| Ptot | total power dissipation | f > 1 MHz;Ts = 25 °C (note 1) |
31 | W | |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | operating junction temperature | 200 |
BLV100 Features
* Internal input matching to achieve high power gain
* Ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.
* Ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.
BLV100 Connection Diagram
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