BLV92, BLV920, BLV93 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:TO-61 D/C:08+/09+
BLV92, BLV920, BLV93 Datasheet download
Part Number: BLV92
MFG: PHILIPS
Package Cooled: TO-61
D/C: 08+/09+
BLV92, BLV920, BLV93
- Table of contents:
Info of BLV92
Info of BLV920
Info of BLV93
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About BLV92
PDF/DataSheet Download
Datasheet: BLV92
File Size: 65286 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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About BLV920
PDF/DataSheet Download
Datasheet: BLV920
File Size: 112627 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLV93
PDF/DataSheet Download
Datasheet: BLV93
File Size: 65450 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BLV92 General Description
N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz communications band.
BLV92 Maximum Ratings
| Collector-base voltage (open emitter)peak value | VCBSM | max. | 36v | ||
| Collector-emitter voltage (open base) | Vceo | max. | 16v | ||
| Emitter-base voltage (open collector) | Vebo | max. | 3v | ||
| Collector current | |||||
| d.c. or average | IC(AV) | max. | 1.5 A | ||
| (peak value); f > 1 MHz | ICM | max. | 4.0 A | ||
| Total power dissipation | Ptot(dc) max. 9W | ||||
|
at Tmb =94 °C |
Ptot (r.f.) | max. | 20 W | ||
| Storage temperature | Tstg | -65 to , 150 °C | |||
| Operating junction temperature | Tj | max. | 200 °C | ||
BLV92 Features
* multi-base structure and emitter-ballasting resistors for an optimum temperature profile
* internal input matching to achieve an optimum wideband capability and high power gain
* gold metallization ensures excellent reliability.
* internal input matching to achieve an optimum wideband capability and high power gain
* gold metallization ensures excellent reliability.
BLV92 Connection Diagram
BLV920 General Description
NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171A flange envelope with a ceramic cap. All leads are isolated from the flange.
BLV920 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | 70 | V | |
| VCES | collector-emitter voltage | open base | 30 | V | |
| VEBO | emitter-base voltage | open collector | 3 | V | |
| IC | collector current(DC) | 3 | A | ||
| IC(AV) | average collector current | 3 | A | ||
| Ptot | total power dissipation | up to Tmb =25 °C | 50 | W | |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | operating junction temperature | 200 |
BLV920 Features
* Internal input matching to achieve high power gain and easy design of wideband circuits
* Emitter ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.
* Emitter ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.
BLV920 Typical Application
* Base station transmitters in the 820 to 960 MHz range.
BLV920 Connection Diagram
BLV93 General Description
N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz communications band.
BLV93 Maximum Ratings
| Collector-base voltage (open emitter)peak value | VCBSM | max. | 36v | ||
| Collector-emitter voltage (open base) | Vceo | max. | 16v | ||
| Emitter-base voltage (open collector) | Vebo | max. | 3v | ||
| Collector current | |||||
| d.c. or average | IC(AV) | max. | 1.6 A | ||
| (peak value); f > 1 MHz | ICM | max. | 4.8 A | ||
| Total power dissipation | Ptot(dc) max. 18W | ||||
|
at Tmb =94 °C |
Ptot (r.f.) | max. | 24 W | ||
| Storage temperature | Tstg | -65 to , 150 °C | |||
| Operating junction temperature | Tj | max. | 200 °C | ||
BLV93 Features
* multi-base structure and emitter-ballasting resistors for an optimum temperature profile
* internal input matching to achieve an optimum wideband capability and high power gain
* gold metallization ensures excellent reliability.
* internal input matching to achieve an optimum wideband capability and high power gain
* gold metallization ensures excellent reliability.
BLV93 Connection Diagram
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