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BSO4263GS, BSO4410, BSO4420

Table of contents:
Info of BSO4263GS
Info of BSO4410
Info of BSO4420

BSO4263GS, BSO4410, BSO4420 Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:05+ D/C:3300

BSO4263GS, BSO4410, BSO4420 Datasheet download

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Part Number: BSO4410

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: 05+

D/C: 3300

Description: MOSFET N-CH 30V 13A 8-SOIC

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BSO4410 Parameters

Technical/Catalog Information	BSO4410
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	11.1A
Rds On (Max) @ Id, Vgs	13 mOhm @ 11.1A, 10V
Input Capacitance (Ciss) @ Vds	1280pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	21nC @ 5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSO4410 BSO4410 BSO4410INTR ND BSO4410INTRND BSO4410INTR

BSO4410 Maximum Ratings

Parameter	Symbol	Values	Unit
Continuous drain current T_A=25°C T_A=70°C	I_D	11.1 8.9	A
Pulsed drain current T_A=25°C	I_Dpulse	44.5	A
Avalanche energy, single pulse I_D=12.7 A , V_DD=25V, R_GS=25	E_AS	126	mJ
Reverse diode dv/dt I_S=12.7A, V_DS=24V, di/dt=200A/s, T_jmax=150°C	dv/dt	6	kV/s
Gate source voltage	V_GS	±25	V
Power dissipation T_A=25°C	P_tot	2.5	W
Operating and storage temperature	T _j , T _stg	-55 ... +150	°C
IEC climatic category, DIN IEC 68-1		55/150/56

BSO4410 Features

• N-Channel
• Enhancement mode
• Logic Level
• Excellent Gate Charge x R_DS(on) product (FOM)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
• Ideal for fast switching applications

BSO4420 Parameters

Technical/Catalog Information	BSO4420
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	13A
Rds On (Max) @ Id, Vgs	7.8 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds	2213pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	33.7nC @ 5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSO4420 BSO4420 BSO4420INTR ND BSO4420INTRND BSO4420INTR

BSO4420 Maximum Ratings

Parameter	Symbol	Values	Unit
Continuous drain current T_A=25°C	I_D	13	A
Pulsed drain current T_A=25°C	I_Dpulse	52	A
Avalanche energy, single pulse I_D=12.7 A , V_DD=25V, R_GS=25	E_AS	230	mJ
Reverse diode dv/dt I_S=12.7A, V_DS=24V, di/dt=200A/s, T_jmax=150°C	dv/dt	6	kV/s
Gate source voltage	V_GS	±25	V
Power dissipation T_A=25°C	P_tot	2.5	W
Operating and storage temperature	T _j , T _stg	-55 ... +150	°C
IEC climatic category, DIN IEC 68-1		55/150/56

BSO4420 Features

• N-Channel
• Logic Level
• Very low on-resistance R_DS(on)
• Excellent Gate Charge x R_DS(on) product (FOM)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
• Ideal for fast switching applications

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