BSP120, BSP121, BSP122 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:. D/C:06+
BSP120, BSP121, BSP122 Datasheet download
Part Number: BSP120
MFG: PHILIPS
Package Cooled: .
D/C: 06+
BSP120, BSP121, BSP122
- Table of contents:
Info of BSP120
Info of BSP121
Info of BSP122
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About BSP120
PDF/DataSheet Download
Datasheet: BSP120
File Size: 67372 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BSP121
PDF/DataSheet Download
Datasheet: BSP121
File Size: 77274 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BSP122
PDF/DataSheet Download
Datasheet: BSP122
File Size: 59972 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BSP120 General Description
N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers.
BSP120 Maximum Ratings
Drain-source voltage .........................VDS max. 200 V
Gate-source voltage (open drain) .................±VGSO max. 20 V
Drain current (DC).......................... ID max. 250 mA
Drain current (peak)........................ IDM max. 800 mA
Total power dissipation up to Tamb = 25 °C (note 1) ........Ptot max. 1.5 W
Storage temperature range ...................Tstg -65 to + 150 °C
Junction temperature .........................Tj max. 150 °C
Note:1. Device mounted on an epoxy printed-circuit board 40 mm X 40 mm X 1.5 mm; mounting pad for the drain lead min. 6 cm2.
BSP120 Features
· Direct interface to C-MOS, TTL, etc.
· High-speed switching
· No secondary breakdown
· High-speed switching
· No secondary breakdown
BSP120 Connection Diagram
BSP121 General Description
N-channel enhancement mode vertical D-MOS transistor in aminiature SOT223 envelope and designed for use as a line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers.
BSP121 Maximum Ratings
|
Drain-source voltage |
VDS |
max. |
200V |
|
Gate-source voltage (open drain) |
±VGSO |
max. |
20 V |
|
Drain current (DC) |
ID |
max. |
350 mA |
|
Drain current (peak) |
IDM |
max. |
1.2 A |
|
Total power dissipation up to Tamb = 25 °C (note 1) |
Ptot |
1.5W | |
|
Storage temperature range |
Tstg |
-65 to + 150 °C | |
|
Junction temperature |
Tj |
max. |
150 °C |
1. Device mounted on an epoxy printed-circuit board 40 mm X 40 mmX 1.5 mm; mounting pad for the drain lead
min. 6 cm2.
BSP121 Features
· Direct interface to C-MOS, TTL, etc.
· High-speed switching
· No secondary breakdown
· High-speed switching
· No secondary breakdown
BSP121 Connection Diagram
BSP122 General Description
N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.
BSP122 Features
Direct interface to C-MOS, TTL, etc.
· High-speed switching
· No secondary breakdown.
· High-speed switching
· No secondary breakdown.
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