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BSP125L6327, BSP126, BSP127

Table of contents:
Info of BSP125L6327
Info of BSP126
Info of BSP127

BSP125L6327, BSP126, BSP127 Selling Leads, Datasheet

MFG:INFINEON Package Cooled:07+ D/C:08+

BSP125L6327, BSP126, BSP127 Datasheet download

Five Points

Part Number: BSP125L6327

MFG: INFINEON

Package Cooled: 07+

D/C: 08+

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BSP126 General Description

N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers.

BSP126 Maximum Ratings

Drain-source voltage	V_DS	max.	250 V
Gate-source voltage (open drain)	±V_GSO	max.	20 V
Drain current (DC)	I_D	max.	350 mA
Drain current (peak)	I_DM	max.	1.2 A
Total power dissipation up to T_amb = 25 °C (note 1)	P_tot		1.5W
Storage temperature range	T_stg		-65 to + 150 °C
Junction temperature	T_j	max.	150 °C

Note
1. Device mounted on an epoxy printed-circuit board 40 mm X 40 mmX 1.5 mm; mounting pad for the drain lead
min. 6 cm².

BSP126 Features

· Direct interface to C-MOS, TTL, etc.
· High-speed switching.
· No secondary breakdown.

BSP126 Connection Diagram

BSP127 General Description

N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.

BSP127 Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DS	drain-source voltage			270	V
±V_GSO	gate-source voltage	open drain		20	V
I_D	DC drain current			350	mA
I_DM	peak drain current			1.4	A
P_tot	total power dissipation	up to T_amb = 25 °C; note 1		1.5	W
T_stg	storage temperature		-65	150	°C
T_j	operating junction temperature			150	°C

Note
1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm².

BSP127 Features

· Direct interface to C-MOS, TTL, etc.
· High-speed switching
· No secondary breakdown.

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