MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:. D/C:06+
BSP128, BSP129, BSP129E6327 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: .
D/C: 06+
Description: MOSFET N-CH 240V 350MA SOT223
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PDF/DataSheet Download
Datasheet: BSP128
File Size: 52028 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BSP129
File Size: 211207 KB
Manufacturer: INFINEON [Infineon Technologies AG]
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PDF/DataSheet Download
Datasheet: BSP030
File Size: 111955 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
|
VDS |
drain-source voltage |
200 |
V | ||
|
±VGSO |
gate-source voltage |
open drain |
20 |
V | |
|
ID |
DC drain current |
350 |
mA | ||
|
IDM |
peak drain current |
1.4 |
A | ||
|
Ptot |
total power dissipation |
up to Tamb = 25 °C; note 1 |
1.5 |
W | |
|
Tstg |
storage temperature |
-65 |
150 |
°C | |
|
Tj |
operating junction temperature |
150 |
°C |
Note
1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm2.
|
Parameter |
Symbol |
Value |
Unit |
|
Continuous drain current TA=25° C TA=70°C |
ID |
0.35 |
A |
|
Pulsed drain current TA=25°C |
I D puls |
1.4 | |
|
Reverse diode dv/dt |
dv/dt |
6 |
kV/s |
|
Gate source voltage |
V GS |
± 20 |
V |
|
ESD sensitivity (HBM) as per |
|
Class 1 |
|
|
Power dissipation TA=25°C |
Ptot |
1.8 |
V |
|
Operating and storage temperature |
Tj , Tstg |
-55... +150 |
W |
|
IEC climatic category; DIN IEC 68-1 |
55/150/00 |
°C |
| Technical/Catalog Information | BSP129E6327 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 240V |
| Current - Continuous Drain (Id) @ 25° C | 350mA |
| Rds On (Max) @ Id, Vgs | 6 Ohm @ 350mA, 10V |
| Input Capacitance (Ciss) @ Vds | 108pF @ 25V |
| Power - Max | 1.8W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 5.7nC @ 5V |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| FET Feature | Depletion Mode |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | BSP129E6327 BSP129E6327 BSP129INTR ND BSP129INTRND BSP129INTR |
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