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·NPN transistor in a SOT223 plastic package. ·PNP complement: BSP16.
BSP19 Maximum Ratings
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage BSP19 BSP20
open emitter
400
300
V
V
VCEO
collector-emitter voltage BSP19 BSP20
open base
350
250
V
V
VEBO
emitter-base voltage
open collector
5
V
IC
collector current (DC)
100
mA
IB
base current (DC)
100
mA
Ptot
total power dissipation
Tamb 25 °C; note 1
1.2
W
Tstg
storage temperature
-65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
-65
+150
°C
Note 1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see "Thermal considerations for SOT223 in the General Part of associated Handbook".
BSP19 Features
· Low current (max. 100 mA) · High voltage (max. 350 V).
BSP19 Typical Application
· Switching and amplification · Especially used in telephony and automotive applications.