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BSP615S2L, BSP61E6327PCN, BSP62

Table of contents:
Info of BSP615S2L
Info of BSP61E6327PCN
Info of BSP62

BSP615S2L, BSP61E6327PCN, BSP62 Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:. D/C:06+

BSP615S2L, BSP61E6327PCN, BSP62 Datasheet download

Five Points

Part Number: BSP615S2L

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: .

D/C: 06+

Description: MOSFET N-CHAN 55V SOT-223

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BSP615S2L Parameters

Technical/Catalog Information	BSP615S2L
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	2.8A
Rds On (Max) @ Id, Vgs	90 mOhm @ 1.4A, 10V
Input Capacitance (Ciss) @ Vds	330pF @ 25V
Power - Max	1.8W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	10nC @ 10V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSP615S2L BSP615S2L

BSP615S2L Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current T_A=25°C T_A=70°C	I_D	2.8 2.3	A
Pulsed drain current T_A=25°C	I_{D puls}	11	A
Gate source voltage	V_GS	± 20
Power dissipation T_A=25°C	P_tot	1.8	V
Operating and storage temperature	T_j, T_stg	-55... +150	W
IEC climatic category; DIN IEC 68-1		55/150/00	°C

BSP615S2L Features

• N-Channel
• Enhancement mode
• Logic Level

BSP62 Maximum Ratings

Parameter	Symbol	Values			Unit
Parameter	Symbol	BSP 60	BSP 61	BSP 62	V
Collector-emitter voltage	V_CER	45	60	80
Collector-base voltage	V_CB0	60	80	90
Emitter-base voltage	V_EB0	5	5	5
Collector current	I_C	1			A
Peak collector current	I_CM	2
Base current	I_B	100
Total power dissipation, T_S= 124 °C	P_tot	1.5			W
Junction temperature	T_j	150			°C
Storage temperature range	T_stg	65 . + 150			°C

BSP62 Features

· High collector current
· Low collector-emitter saturation voltage
· Complementary types: BSP50 ... BSP52 (NPN)

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