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N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS®technology. Providing embedded protective functions.
BSP742RI Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage
Vbb
40
V
Supply voltage for full short circuit protection
Vbb(SC)
Vbb
Continuous input voltage
VIN
-10 ... +16
Load current (Short - circuit current, see page 5)
IL
self limited
A
Current through input pin (DC)
IIN
± 5
mA
Operating temperature
Tj
-40 ...+150
°C
Storage temperature
Tstg
-55 ... +150
Power dissipation 1)
Ptot
1.5
W
Inductive load switch-off energy dissipation1)2) single pulse, (see page 9 ) Tj =150 °C, IL = 1 A
EAS
800
mJ
Load dump protection2) VLoadDump3)= VA + VS RI=2, td=400ms, VIN= low or high, VA=13,5V RL = 13.5 RL = 27
VLoaddump
60
V
Electrostatic discharge voltage (Human Body Model) according to ANSI EOS/ESD - S5.1 - 1993 ESD STM5.1 - 1998 Input pin all other pins
VESD
± 1 ± 5
kV
BSP742RI Features
• Overload protection • Current limitation • Short circuit protection • Thermal shutdown with restart • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection with external resistor • Open drain diagnostic output • CMOS compatible input • Loss of GND and loss of Vbb protection • ESD - Protection • Very low standby current
BSP742RI Typical Application
• All types of resistive, inductive and capacitive loads • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits