BU505DF, BU505F, BU506 Selling Leads, Datasheet
MFG:ST Package Cooled:09+ D/C:03+
BU505DF, BU505F, BU506
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Info of BU505DF
Info of BU505F
Info of BU506
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About BU505DF
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Datasheet: BU505DF
File Size: 83053 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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About BU505F
PDF/DataSheet Download
Datasheet: BU505F
File Size: 83053 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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About BU506
PDF/DataSheet Download
Datasheet: BU506
File Size: 79247 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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BU505DF General Description
High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. The BU505DF has an integrated efficiency diode.
BU505DF Maximum Ratings
| Symbol | Parameter | CONDITIONS | MIN. | MAX. | Units |
| VCESM | collector-emitter peak voltage | VBE = 0 | - | 1500 | V |
| VCEO | collector-emitter voltage | open base | - | 700 | V |
| ICsat | collector saturation current | - | 2 | A | |
| IC | collector current (DC) | see Fig.4 | - | 2.5 | A |
| ICM | collector current (peak value) | see Fig.4 | - | 4 | A |
| IB | base current (DC) | - | 2 | A | |
| IBM | base current (peak value) | - | 4 | A | |
| Ptot | total power dissipation | Tmb 25 °C; see Fig.2 | - | 20 | W |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | junction temperature | - | 150 |
BU505DF Typical Application
* Horizontal deflection circuits of colour television receivers.
BU505F General Description
High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. The BU505DF has an integrated efficiency diode.
BU505F Maximum Ratings
| Symbol | Parameter | CONDITIONS | MIN. | MAX. | Units |
| VCESM | collector-emitter peak voltage | VBE = 0 | - | 1500 | V |
| VCEO | collector-emitter voltage | open base | - | 700 | V |
| ICsat | collector saturation current | - | 2 | A | |
| IC | collector current (DC) | see Fig.4 | - | 2.5 | A |
| ICM | collector current (peak value) | see Fig.4 | - | 4 | A |
| IB | base current (DC) | - | 2 | A | |
| IBM | base current (peak value) | - | 4 | A | |
| Ptot | total power dissipation | Tmb 25 °C; see Fig.2 | - | 20 | W |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | junction temperature | - | 150 |
BU505F Typical Application
* Horizontal deflection circuits of colour television receivers.
BU506 General Description
High-voltage, high-speed, switching NPN power transistor in a TO-220AB package. The BU506D has an integrated efficiency diode.
BU506 Maximum Ratings
| Symbol | Parameter | CONDITIONS | MIN. | MAX. | Units |
| VCESM | collector-emitter peak voltage | VBE = 0 | - | 1500 | V |
| VCEO | collector-emitter voltage | open base | - | 700 | V |
| ICsat | collector saturation current | - | 3 | A | |
| IC | collector current (DC) | see Fig.2 | - | 5 | A |
| ICM | collector current (peak value) | see Fig.2 | - | 8 | A |
| IB | base current (DC) | - | 3 | A | |
| IBM | base current (peak value) | - | 5 | A | |
| Ptot | total power dissipation | Tmb 25 °C; see Fig.3 | - | 100 | W |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | junction temperature | - | 150 |
BU506 Typical Application
* Horizontal deflection circuits of colour television receivers
* Line-operated switch-mode applications.
* Line-operated switch-mode applications.
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