BU508DFI, BU508DR, BU508DRF Selling Leads, Datasheet
MFG:PHI Package Cooled:TO-3P D/C:03+
BU508DFI, BU508DR, BU508DRF Datasheet download
Part Number: BU508DFI
MFG: PHI
Package Cooled: TO-3P
D/C: 03+
BU508DFI, BU508DR, BU508DRF
- Table of contents:
Info of BU508DFI
Info of BU508DR
Info of BU508DRF
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About BU508DFI
PDF/DataSheet Download
Datasheet: BU508DFI
File Size: 82497 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About BU500
PDF/DataSheet Download
Datasheet: BU500
File Size: 55598 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About BU500
PDF/DataSheet Download
Datasheet: BU500
File Size: 55598 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
BU508DFI General Description
The BU208D, BU508D and BU508DFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switchingspeeds.
BU508DFI Maximum Ratings
| Symbol | Parameter | Value | Unit | ||
| VCES | Collector-Emitter Voltage (VBE =0) | 1500 | V | ||
| VCEO | Collector-Emitter Voltage (IB = 0) | 700 | V | ||
| VEBO | Emitter-Base Voltage (IC =0) | 10 | V | ||
| IC | Collector Current | 8 | A | ||
| ICM | Collector Peak Current (tp <5ms) | 15 | A | ||
| TO - 3 | TO - 218 | ISOWATT218 | |||
| Ptot | Total Dissipation at TC =25 | 150 | 125 | 50 | W |
| Tstg | Storage Temperature | -65 to 175 | -65 to 150 | -65 to 150 | |
| Tj | Max. Operating Junction Temperature | 175 | 150 | 150 | |
| Rthj-case | Thermal Resistance Junction-case Max | 1 | 1 | 2.5 | /W |
BU508DFI Typical Application
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