MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:. D/C:06+
BUZ10, BUZ10/A, BUZ100 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: .
D/C: 06+
Description: MOSFET N-CH 50V 23A TO-220
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PDF/DataSheet Download
Datasheet: BUZ10
File Size: 135632 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUZ10
File Size: 135632 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUZ100
File Size: 190453 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
| Technical/Catalog Information | BUZ10 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25° C | 23A |
| Rds On (Max) @ Id, Vgs | 70 mOhm @ 14A, 10v |
| Input Capacitance (Ciss) @ Vds | 900pF @ 25V |
| Power - Max | 75W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | BUZ10 BUZ10 497 2728 5 ND 49727285ND 497-2728-5 |
| Parameter | Symbol | Values | Unit |
| Continuous drain current TC =26 |
ID | 23 | A |
| Pulsed drain current TC = 25 |
IDpuls | 92 | |
| Avalanche current,limited by Tjmax | IAR | 23 | |
| Avalanche energy,periodic limited by Tjmax |
EAR |
1.3 |
mJ |
|
Avalanche energy, single pulse |
EAS | 8 | |
| Gate source voltage | VGS | ± 20 | V |
| Power dissipation TC = 25 |
Ptot | 75 | W |
| Operating temperature | Tj | -55 ... + 150 | |
| Storage temperature | Tstg | -55 ... + 150 | |
| Thermal resistance, chip case | RthJC | 1.67 | K/W |
| Thermal resistance, chip to ambient | RthJA | 75 | |
| DIN humidity category, DIN 40 040 | E | ||
| IEC climatic category, DIN IEC 68-1 | 55 / 150 / 56 |
| Parameter | Symbol | Values | Unit |
| Continuous drain current TC = 23 °C |
ID | 60 |
A |
| Pulsed drain current TC = 25 °C |
IDpuls | 240 | |
| Avalanche energy, single pulse ID = 40 A, VDD = 25 V, RGS = 25 Ω L = 63 µH, Tj= 25 °C |
EAS | 250 |
mJ |
| Reverse diode dv/dt IS = 40 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C |
dv/dt | 6 |
kV/µs |
| Gate source voltage | VGS | ± 20 | V |
| Power dissipation TC = 25 °C |
Ptot | 250 |
W |
| Operating temperature | Tj | -55 ... + 175 | °C |
| Storage temperature | Tstg | -55 ... + 175 | |
| Thermal resistance, chip case | RthJC | 0.6 | K/W |
| Thermal resistance, chip to ambient | RthJA | 75 | |
| DIN humidity category, DIN 40 040 | E | ||
| IEC climatic category, DIN IEC 68-1 | 55 / 175 / 56 |
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