BUZ101SL, BUZ101SL-4, BUZ102 Selling Leads, Datasheet
MFG:Infineon Package Cooled:TO-220 D/C:08+/09+
BUZ101SL, BUZ101SL-4, BUZ102 Datasheet download
Part Number: BUZ101SL
MFG: Infineon
Package Cooled: TO-220
D/C: 08+/09+
BUZ101SL, BUZ101SL-4, BUZ102
- Table of contents:
Info of BUZ101SL
Info of BUZ101SL-4
Info of BUZ102
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About BUZ101SL
PDF/DataSheet Download
Datasheet: BUZ101SL
File Size: 135369 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
About BUZ101SL-4
PDF/DataSheet Download
Datasheet: BUZ101SL-4
File Size: 92403 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
About BUZ102
PDF/DataSheet Download
Datasheet: BUZ102
File Size: 187762 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
BUZ101SL Maximum Ratings
| Parameter | Symbol | Values | Unit |
| Continuous drain current TC = 25 TC = 100 |
ID | 20 14 |
A |
| Pulsed drain current TC = 25 |
IDpuls | 80 | |
| Avalanche energy, single pulse ID = 70 A, VDD = 25 V, RGS = 25 L =450 H, Tj = 25 |
EAS | 90 | mJ |
| Avalanche current,limited by Tjmax | IAR | 20 | A |
| Avalanche energy,periodic limited by Tjmax | EAR | 5.5 | mJ |
| Reverse diode dv/dt IS = 20 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | +14 | V |
| Power dissipation TC = 25 |
Ptot | 55 | W |
BUZ101SL Features
• N channel
• Enhancement mode
• Logic Level
• Avalanche-rated
• dv/dt rated
• 175 operating temperature
• also in SMD available
• Enhancement mode
• Logic Level
• Avalanche-rated
• dv/dt rated
• 175 operating temperature
• also in SMD available
BUZ101SL-4 Maximum Ratings
| Parameter | Symbol | Values | Unit |
| Continuous drain current one channel active TA = 25 |
ID | 4.1 | A |
| Pulsed drain current one channel active TA= 25 |
IDpuls | 16.4 | |
| Avalanche energy, single pulse ID = 4.1 A, VDD = 25 V, RGS = 25 L =10.7mH, Tj = 25 |
EAS | 90 | mJ |
| Reverse diode dv/dt IS =4.1 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ± 14 | V |
| Power dissipation ,one channel active TA = 25 |
Ptot | 2.4 | W |
| Operating temperature | Tj | -55 ... + 175 | |
| Storage temperature | Tstg | -55 ... + 175 | |
| IEC climatic category, DIN IEC 68-1 | 55 / 175/ 56 |
BUZ101SL-4 Features
• Quad-channel
• Enhancement mode
• Logic level
• Avalanche-rated
• dv/dt rated
• Enhancement mode
• Logic level
• Avalanche-rated
• dv/dt rated
BUZ102 Maximum Ratings
| Parameter | Symbol | Values | Unit |
| Continuous drain current TC = 23 °C |
ID | 42 |
A |
| Pulsed drain current TC = 25 °C |
IDpuls | 168 | |
| Avalanche energy, single pulse ID = 40 A, VDD = 25 V, RGS = 25 Ω L = 63 µH, Tj= 25 °C |
EAS | 180 |
mJ |
| Reverse diode dv/dt IS = 40 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C |
dv/dt | 6 |
kV/µs |
| Gate source voltage | VGS | ± 20 | V |
| Power dissipation TC = 25 °C |
Ptot | 200 |
W |
| Operating temperature | Tj | -55 ... + 175 | °C |
| Storage temperature | Tstg | -55 ... + 175 | |
| Thermal resistance, chip case | RthJC | 0.83 | K/W |
| Thermal resistance, chip to ambient | RthJA | 75 | |
| DIN humidity category, DIN 40 040 | E | ||
| IEC climatic category, DIN IEC 68-1 | 55 / 175 / 56 |
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