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BUZ102AL, BUZ102S, BUZ102S-4

Table of contents:
Info of BUZ102AL
Info of BUZ102S
Info of BUZ102S-4

BUZ102AL, BUZ102S, BUZ102S-4 Selling Leads, Datasheet

MFG:ST/SIE/INF Package Cooled:09+ D/C:04+

BUZ102AL, BUZ102S, BUZ102S-4 Datasheet download

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Part Number: BUZ102AL

MFG: ST/SIE/INF

Package Cooled: 09+

D/C: 04+

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BUZ102AL Maximum Ratings

Parameter	Symbol	Values	Unit
Continuous drain current T_C = 100 °C	I_D	42	A
Pulsed drain current T_C = 25 °C	I_Dpuls	168	A
Avalanche energy, single pulse I_D = 40 A, V_DD = 25 V, R_GS = 25 Ω L = 63 µH, T_j= 25 °C	E_AS	180	mJ
Reverse diode dv/dt I_S = 40 A, V_DS = 40 V, di_F/dt = 200 A/µs T_jmax = 175 °C	dv/dt	6	kV/µs
Gate source voltage	V_GS	± 14	V
Gate-source peak voltage,aperiodic	V_gs	± 20	V
Power dissipation T_C = 25 °C	P_tot	200	W

BUZ102S Maximum Ratings

Parameter	Symbol	Values	Unit
Continuous drain current T_C = 25 °C T_C = 100 °C	I_D	52 37	A
Pulsed drain current T_C = 25 °C	I_Dpuls	208	A
Avalanche energy, single pulse I_D = 40 A, V_DD = 25 V, R_GS = 25 Ω L = 63 µH, T_j= 25 °C	E_AS	245	mJ
Avalanche current,limited by T_jmax	I_AR	52	A
Avalanche energy,periodic limited by T_jmax	E_AR	12	mJ
Reverse diode dv/dt I_S = 40 A, V_DS = 40 V, di_F/dt = 200 A/µs T_jmax = 175 °C	dv/dt	6	kV/µs
Gate source voltage	V_GS	± 20	V
Power dissipation T_C = 25 °C	P_tot	120	W

BUZ102S-4 Maximum Ratings

Parameter	Symbol	Values	Unit
Continuous drain current one channel active T_A = 25	I_D	6.4	A
Pulsed drain current one channel active T_A = 25	I_Dpuls	25.6	A
Avalanche energy, single pulse I_D = 6.4 A, V_DD = 25 V, R_GS = 25 L = 12 mH, T j = 25	E_AS	245	mJ
Reverse diode dv/dt I_S = 6.4 A, V_DS = 40 V, di_F/dt = 200 A/s T_jmax = 175	d_v/dt	6	kV/s
Gate source voltage	V_GS	± 20	V
Power dissipation ,one channel active T_A = 25	P_tot	2.4	W
Operating temperature	T_j	-55 ... + 175
Storage temperature	T_stg	-55 ... + 175
IEC climatic category, DIN IEC 68-1		55 / 175 / 56

BUZ102S-4 Features

• Quad-channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated

BUZ102S-4 Connection Diagram

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