BUZ100L/S, BUZ100S, BUZ100S-4 Selling Leads, Datasheet
MFG:ST/SIE/INF Package Cooled:09+ D/C:TO-220
BUZ100L/S, BUZ100S, BUZ100S-4 Datasheet download
Part Number: BUZ100L/S
MFG: ST/SIE/INF
Package Cooled: 09+
D/C: TO-220
MFG:ST/SIE/INF Package Cooled:09+ D/C:TO-220
BUZ100L/S, BUZ100S, BUZ100S-4 Datasheet download
MFG: ST/SIE/INF
Package Cooled: 09+
D/C: TO-220
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: BUZ10
File Size: 135632 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUZ100S
File Size: 129031 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUZ100S-4
File Size: 92674 KB
Manufacturer: Infineon
Download : Click here to Download
Parameter | Symbol | Values | Unit |
Continuous drain current TC = 25 °C TC = 100 °C |
ID | 77 55 |
A |
Pulsed drain current TC = 25 °C |
IDpuls | 308 | |
Avalanche energy, single pulse ID = 40 A, VDD = 25 V, RGS = 25 Ω L = 63 µH, Tj= 25 °C |
EAS | 308 |
mJ |
Avalanche current,limited by Tjmax | IAR | 77 | A |
Avalanche energy,periodic limited by Tjmax | EAR | 17 | mJ |
Reverse diode dv/dt IS = 40 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C |
dv/dt | 6 |
kV/µs |
Gate source voltage | VGS | ± 20 | V |
Power dissipation TC = 25 °C |
Ptot | 170 |
W |
Parameter | Symbol | Values | Unit |
Continuous drain current one channel active TA = 25 |
ID |
8 |
A |
Pulsed drain current one channel active TA = 25 |
IDpuls |
32 | |
Avalanche energy, single pulse ID = 6.4 A, VDD = 25 V, RGS = 25 L = 12 mH, Tj = 25 |
EAS |
380 |
mJ |
Reverse diode dv/dt IS = 8 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 |
dv/dt |
6 |
kV/s |
Gate source voltage | VGS |
± 20 |
V |
Power dissipation ,one channel active TA = 25 |
Ptot |
2.4 |
W |
Operating temperature | Tj |
-55 ... + 175 |
|
Storage temperature | Tstg |
-55 ... + 175 | |
IEC climatic category, DIN IEC 68-1 |
55 / 175 / 56 |