BUZ100SL, BUZ100SL-4, BUZ101 Selling Leads, Datasheet
MFG:INFINEON Package Cooled:. D/C:06+
BUZ100SL, BUZ100SL-4, BUZ101 Datasheet download
Part Number: BUZ100SL
MFG: INFINEON
Package Cooled: .
D/C: 06+
MFG:INFINEON Package Cooled:. D/C:06+
BUZ100SL, BUZ100SL-4, BUZ101 Datasheet download
MFG: INFINEON
Package Cooled: .
D/C: 06+
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PDF/DataSheet Download
Datasheet: BUZ100SL
File Size: 126220 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUZ100SL-4
File Size: 91749 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUZ101
File Size: 189550 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
Parameter | Symbol | Values | Unit |
Continuous drain current TC = 25 TC = 100 |
ID | 70 50 |
A |
Pulsed drain current TC = 25 |
IDpuls | 280 | |
Avalanche energy, single pulse ID = 70 A, VDD = 25 V, RGS = 25 W L = 155 H, Tj = 25 |
EAS | 380 | mJ |
Avalanche current,limited by Tjmax | IAR | 70 | A |
Avalanche energy,periodic limited by Tjmax | EAR | 17 | mJ |
Reverse diode dv/dt IS = 70 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 |
dv/dt | 6 | kV/s |
Gate source voltage | VGS | +14 | V |
Power dissipation TC = 25 |
Ptot | 170 | W |
Parameter | Symbol | Values | Unit |
Continuous drain current one channel active TA = 25 |
ID | 7.4 | A |
Pulsed drain current one channel active TA= 25 |
IDpuls | 29.6 | |
Avalanche energy, single pulse ID = 7.4 A, VDD = 25 V, RGS = 25 L =13.8 mH, Tj = 25 |
EAS | 380 | mJ |
Reverse diode dv/dt IS = 7.4 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 |
dv/dt | 6 | kV/s |
Gate source voltage | VGS | ± 14 | V |
Power dissipation ,one channel active TA = 25 |
Ptot | 2.4 | W |
Operating temperature | Tj | -55 ... + 175 | |
Storage temperature | Tstg | -55 ... + 175 | |
IEC climatic category, DIN IEC 68-1 | 55 / 175/ 56 |
Parameter | Symbol | Values | Unit |
Continuous drain current TC = 31 |
ID | 29 | A |
Pulsed drain current TC = 25 |
IDpuls | 16 | |
Avalanche energy, single pulse ID = 29 A, VDD = 25 V, RGS = 25 L = 83 H, Tj = 25 |
EAS |
70 |
mJ |
Reverse diode dv/dt IS = 29 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 |
dv/dt | 6 | kV/s |
Gate source voltage | VGS | ± 20 | V |
Power dissipation TC = 25 |
Ptot | 100 | W |
Operating temperature | Tj | -55 ... + 175 | |
Storage temperature | Tstg | -55 ... + 175 | |
Thermal resistance, chip case | RthJC | 1.5 | K/W |
Thermal resistance, chip to ambient | RthJA | 75 | |
DIN humidity category, DIN 40 040 | E | ||
IEC climatic category, DIN IEC 68-1 | 55 / 150 / 56 |