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BUZ104, BUZ104L, BUZ104S

Table of contents:
Info of BUZ104
Info of BUZ104L
Info of BUZ104S

BUZ104, BUZ104L, BUZ104S Selling Leads, Datasheet

MFG:Infineon Package Cooled:TO-220 D/C:08+/09+

BUZ104, BUZ104L, BUZ104S Datasheet download

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Part Number: BUZ104

MFG: Infineon

Package Cooled: TO-220

D/C: 08+/09+

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BUZ104 Maximum Ratings

Parameter	Symbol	Values	Unit
Continuous drain current T_C = 23 °C	I_D	17.5	A
Pulsed drain current T_C = 25 °C	I_Dpuls	70	A
Avalanche energy, single pulse I_D = 40 A, V_DD = 25 V, R_GS = 25 Ω L = 63 µH, T_j= 25 °C	E_AS	35	mJ
Reverse diode dv/dt I_S = 40 A, V_DS = 40 V, di_F/dt = 200 A/µs T_jmax = 175 °C	dv/dt	6	kV/µs
Gate source voltage	V_GS	± 20	V
Power dissipation T_C = 25 °C	P_tot	60	W
Operating temperature	T_j	-55 ... + 175	°C
Storage temperature	T_stg	-55 ... + 175	°C
Thermal resistance, chip case	R_thJC	2.5	K/W
Thermal resistance, chip to ambient	R_thJA	75	K/W
DIN humidity category, DIN 40 040		E
IEC climatic category, DIN IEC 68-1		55 / 175 / 56

BUZ104L Maximum Ratings

Parameter	Symbol	Values	Unit
Continuous drain current T_C = 100 °C	I_D	17.5	A
Pulsed drain current T_C = 25 °C	I_Dpuls	70	A
Avalanche energy, single pulse I_D = 40 A, V_DD = 25 V, R_GS = 25 Ω L = 63 µH, T_j= 25 °C	E_AS	35	mJ
Reverse diode dv/dt I_S = 40 A, V_DS = 40 V, di_F/dt = 200 A/µs T_jmax = 175 °C	dv/dt	6	kV/µs
Gate source voltage	V_GS	± 14	V
Gate-source peak voltage,aperiodic	V_gs	± 20	V
Power dissipation T_C = 25 °C	P_tot	60	W

BUZ104S Maximum Ratings

Parameter	Symbol	Values	Unit
Continuous drain current T_C = 25 °C T_C = 100 °C	I_D	13.5 9.6	A
Pulsed drain current T_C = 25 °C	I_Dpuls	54	A
Avalanche energy, single pulse I_D = 40 A, V_DD = 25 V, R_GS = 25 Ω L = 63 µH, T_j= 25 °C	E_AS	52	mJ
Avalanche current,limited by T_jmax	I_AR	13.5	A
Avalanche energy,periodic limited by T_jmax	E_AR	3.5	mJ
Reverse diode dv/dt I_S = 40 A, V_DS = 40 V, di_F/dt = 200 A/µs T_jmax = 175 °C	dv/dt	6	kV/µs
Gate source voltage	V_GS	± 20	V
Power dissipation T_C = 25 °C	P_tot	35	W

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