BUZ10A, BUZ10L, BUZ10S Selling Leads, Datasheet
MFG:SIEMENS/INF/ST Package Cooled:PHI,SML,SGSSGS D/C:04+
BUZ10A, BUZ10L, BUZ10S Datasheet download

Part Number: BUZ10A
MFG: SIEMENS/INF/ST
Package Cooled: PHI,SML,SGSSGS
D/C: 04+
MFG:SIEMENS/INF/ST Package Cooled:PHI,SML,SGSSGS D/C:04+
BUZ10A, BUZ10L, BUZ10S Datasheet download

MFG: SIEMENS/INF/ST
Package Cooled: PHI,SML,SGSSGS
D/C: 04+
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PDF/DataSheet Download
Datasheet: BUZ10
File Size: 135632 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUZ10L
File Size: 133836 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUZ10S2
File Size: 135482 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
| Parameter | Symbol | Values | Unit |
| Continuous drain current TC = 26 °C |
ID | 23 |
A |
| Pulsed drain current TC = 25 °C |
IDpuls | 92 | |
| Avalanche energy, single pulse ID = 40 A, VDD = 25 V, RGS = 25 Ω L = 63 µH, Tj= 25 °C |
EAS | 8 |
mJ |
| Avalanche current,limited by Tjmax | IAR | 23 | A |
| Avalanche energy,periodic limited by Tjmax | EAR | 1.3 | mJ |
| Reverse diode dv/dt IS = 40 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C |
dv/dt | 6 |
kV/µs |
| Gate source voltage | VGS | ± 14 | V |
| Gate-source peak voltage,aperiodic | Vgs | ± 20 | |
| Power dissipation TC = 25 °C |
Ptot | 75 |
W |
| Operating temperature | Tj | -55 ... + 150 | °C |
| Storage temperature | Tstg | -55 ... + 150 | |
| Thermal resistance, chip case | RthJC | 1.67 | K/W |
| Thermal resistance, chip to ambient | RthJA | 75 | |
| DIN humidity category, DIN 40 040 | E | ||
| IEC climatic category, DIN IEC 68-1 | 55 / 150 / 56 |
