BUZ341, BUZ342, BUZ344 Selling Leads, Datasheet
MFG:MOTOROLA Package Cooled:TO-3 D/C:05+
BUZ341, BUZ342, BUZ344 Datasheet download

Part Number: BUZ341
MFG: MOTOROLA
Package Cooled: TO-3
D/C: 05+
MFG:MOTOROLA Package Cooled:TO-3 D/C:05+
BUZ341, BUZ342, BUZ344 Datasheet download

MFG: MOTOROLA
Package Cooled: TO-3
D/C: 05+
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PDF/DataSheet Download
Datasheet: BUZ341
File Size: 95615 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUZ342
File Size: 219366 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUZ344
File Size: 97548 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
| Parameter | Symbol | Values | Unit |
| Continuous drain current TC =28 |
ID | 33 | A |
| Pulsed drain current TC = 25 |
IDpuls | 132 | |
| Avalanche current,limited by Tjmax | IAR | 33 | |
| Avalanche energy,periodic limited by Tjmax |
EAR |
16 |
mJ |
|
Avalanche energy, single pulse |
EAS | 790 | |
| Gate source voltage | VGS | ± 20 | V |
| Power dissipation TC = 25 |
Ptot | 170 | W |
| Operating temperature | Tj | -55 ... + 150 | |
| Storage temperature | Tstg | -55 ... + 150 | |
| Thermal resistance, chip case | RthJC | 0.74 | K/W |
| Thermal resistance, chip to ambient | RthJA | 75 | |
| DIN humidity category, DIN 40 040 | E | ||
| IEC climatic category, DIN IEC 68-1 | 55 / 150 / 56 |
| Parameter | Symbol | Values | Unit |
| Continuous drain current TC = 23 °C |
ID | 60 |
A |
| Pulsed drain current TC = 25 °C |
IDpuls | 240 | |
| Avalanche energy, single pulse ID = 40 A, VDD = 25 V, RGS = 25 Ω L = 63 µH, Tj= 25 °C |
EAS | 460 |
mJ |
| Reverse diode dv/dt IS = 40 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C |
dv/dt | kV/µs | |
| Gate source voltage | VGS | ± 20 | V |
| Power dissipation TC = 25 °C |
Ptot | 400 |
W |
| Operating temperature | Tj | -55 ... + 175 | °C |
| Storage temperature | Tstg | -55 ... + 175 | |
| Thermal resistance, chip case | RthJC | 0.37 | K/W |
| Thermal resistance, chip to ambient | RthJA | 75 | |
| DIN humidity category, DIN 40 040 | E | ||
| IEC climatic category, DIN IEC 68-1 | 55 / 175 / 56 |
| Parameter | Symbol | Values | Unit |
| Continuous drain current TC =25 |
ID | 50 | A |
| Pulsed drain current TC = 25 |
IDpuls | 200 | |
| Avalanche current,limited by Tjmax | IAR | 50 | |
| Avalanche energy,periodic limited by Tjmax |
EAR |
18.5 |
mJ |
|
Avalanche energy, single pulse |
EAS | 400 | |
| Gate source voltage | VGS | ± 20 | V |
| Power dissipation TC = 25 |
Ptot | 170 | W |
| Operating temperature | Tj | -55 ... + 150 | |
| Storage temperature | Tstg | -55 ... + 150 | |
| Thermal resistance, chip case | RthJC | 0.74 | K/W |
| Thermal resistance, chip to ambient | RthJA | 75 | |
| DIN humidity category, DIN 40 040 | E | ||
| IEC climatic category, DIN IEC 68-1 | 55 / 150 / 56 |
