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CPV362M4K, CPV362M4U, CPV362M4UPBF

CPV362M4K, CPV362M4U, CPV362M4UPBF Selling Leads, Datasheet

MFG:IR  D/C:936

CPV362M4K, CPV362M4U, CPV362M4UPBF Picture

CPV362M4K, CPV362M4U, CPV362M4UPBF Datasheet download

Five Points

Part Number: CPV362M4K

 

MFG: IR

Package Cooled:

D/C: 936

 

 

 
 
 
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About CPV362M4K

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Datasheet: CPV362M4K

File Size: 334702 KB

Manufacturer: IRF [International Rectifier]

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About CPV362M4U

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Datasheet: CPV362M4U

File Size: 280938 KB

Manufacturer: IRF [International Rectifier]

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About CPV362M4F

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Datasheet: CPV362M4F

File Size: 288085 KB

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CPV362M4K General Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a premium.

CPV362M4K Maximum Ratings

  Parameter Max. Units
VCES
Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current, each IGBT 5.7 A
IC @ TC = 100°C
Continuous Collector Current, each IGBT 3.0

ICM
Pulsed Collector Current 11
ILM Clamped Inductive Load Current 11
IF @ TC = 100°C
Diode Continuous Forward Current 3.4
IFM Diode Maximum Forward Current 11
tsc Short Circuit Withstand Time 10 s

VGE
Gate-to-Emitter Voltage ± 20 V
VISOL
Isolation Voltage, any terminal to case, 1 minute 2500 VRMS
PD @ TC = 25°C Maximum Power Dissipation, each IGBT 23 W
PD @ TC = 100°C Maximum Power Dissipation, each IGBT 9.1
TJ
TSTG
Operating Junction and
Storage Temperature Range
-40 to +150 °C
  Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)  
  Mounting torque, 6-32 or M3 screw 5-7 lbf•in (0.55 - 0.8 N•m)  

CPV362M4K Features

• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125°C, VGE = 15V
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve

CPV362M4U General Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.

CPV362M4U Maximum Ratings

 
Parameter
Max.
Units
VCES Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C Continuous Collector Current, each IGBT
7.2
A
IC @ TC = 100°C Continuous Collector Current, each IGBT
3.9
ICM Pulsed Collector Current
22
ILM
Clamped Inductive Load Current
22
IF @ TC = 100°C Diode Continuous Forward Current
3.4
IFM Diode Maximum Forward Current
22
VGE Gate-to-Emitter Voltage
±20
V
VISOL Isolation Voltage, any terminal to case, 1 minute
2500
VRMS
PD @ TC = 25°C Maximum Power Dissipation, each IGBT
23
W
PD @ TC = 100°C Maximum Power Dissipation, each IGBT
9.1
TJ
TSTG
Operating Junction and
Storage Temperature Range
-40 to +150
°C
  Soldering Temperature, for 10 sec
300 (0.063 in. (1.6mm) from case)
  Mounting torque, 6-32 or M3 screw.
5-7 lbf•in (0.55-0.8 N•m)
 

CPV362M4U Features

• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve

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