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CPV364M4KPBF, CPV364M4U, CPV364MF

CPV364M4KPBF, CPV364M4U, CPV364MF Selling Leads, Datasheet

MFG:IR  Package Cooled:06+  D/C:12

CPV364M4KPBF, CPV364M4U, CPV364MF Picture

CPV364M4KPBF, CPV364M4U, CPV364MF Datasheet download

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Part Number: CPV364M4KPBF

 

MFG: IR

Package Cooled: 06+

D/C: 12

 

 

 
 
 
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About CPV362M4F

PDF/DataSheet Download

Datasheet: CPV362M4F

File Size: 288085 KB

Manufacturer:

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About CPV364M4U

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Datasheet: CPV364M4U

File Size: 280054 KB

Manufacturer: IRF [International Rectifier]

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About CPV364MF

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Datasheet: CPV364MF

File Size: 471293 KB

Manufacturer: IRF [International Rectifier]

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CPV364M4U General Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.

CPV364M4U Maximum Ratings

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC  = 25°C Continuous Collector Current each IGBT 20 A
IC @ TC = 100 Continuous Collector Currenteach IGBT 10 A
ICM Pulsed Collector Current 60 A
ILM Clamped Inductive Load Current 60 A
IF @ TC = 100 Diode Continuous Forward Current 60 A
IFM Diode Maximum Forward Current 9.3 A
VGE Gate-to-Emitter Voltage ±20 V
VISOL Isolation Voltage, any terminal to case, 1 min 2500 VRMS
PD @ TC = 25 Maximum Power Dissipation, each IGBT 63 W
PD @ TC = 100 Maximum Power Dissipation, each IGBT 25 W
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to +150
  Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
  Mounting torque, 6-32 or M3 screw. 5-7 lbf•in ( 0.55-0.8 N•m)  

CPV364M4U Features

• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve

CPV364MF General Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.

CPV364MF Maximum Ratings

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC  = 25°C Continuous Collector Current each IGBT 27 A
IC @ TC = 100 Continuous Collector Currenteach IGBT 15 A
ICM Pulsed Collector Current 80 A
ILM Clamped Inductive Load Current 80 A
IF @ TC = 100 Diode Continuous Forward Current 9.3 A
IFM Diode Maximum Forward Current 80 A
VGE Gate-to-Emitter Voltage ±20 V
VISOL Isolation Voltage, any terminal to case, 1 min 2500 VRMS
PD @ TC = 25 Maximum Power Dissipation, each IGBT 63 W
PD @ TC = 100 Maximum Power Dissipation, each IGBT 25 W
TJ
TSTG
Operating Junction and
Storage Temperature Range
-40 to +150
  Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
  Mounting torque, 6-32 or M3 screw. 5-7 lbf?in ( 0.55-0.8 N?m)  

CPV364MF Features

• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve

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