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CPV362MF, CPV362MK, CPV362MM

CPV362MF, CPV362MK, CPV362MM Selling Leads, Datasheet

MFG:IR  Package Cooled:N/A  D/C:2010+

CPV362MF, CPV362MK, CPV362MM Picture

CPV362MF, CPV362MK, CPV362MM Datasheet download

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Part Number: CPV362MF

 

MFG: IR

Package Cooled: N/A

D/C: 2010+

 

 

 
 
 
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About CPV362MF

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Datasheet: CPV362MF

File Size: 470011 KB

Manufacturer: IRF [International Rectifier]

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About CPV362MK

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Datasheet: CPV362MK

File Size: 471966 KB

Manufacturer: IRF [International Rectifier]

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Datasheet: CPV362MM

File Size: 458056 KB

Manufacturer: IRF [International Rectifier]

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CPV362MF General Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.

CPV362MF Maximum Ratings

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC  = 25°C Continuous Collector Current each IGBT 8.8 A
IC @ TC = 100 Continuous Collector Currenteach IGBT 4.8 A
ICM Pulsed Collector Current 26 A
ILM Clamped Inductive Load Current 26 A
IF @ TC = 100 Diode Continuous Forward Current 3.4 A
IFM Diode Maximum Forward Current 26 A
VGE Gate-to-Emitter Voltage ±20 V
VISOL Isolation Voltage, any terminal to case, 1 min 2500 VRMS
PD @ TC = 25 Maximum Power Dissipation, each IGBT 23 W
PD @ TC = 100 Maximum Power Dissipation, each IGBT 9.1 W
TJ
TSTG
Operating Junction and
Storage Temperature Range
-40 to +150
  Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
  Mounting torque, 6-32 or M3 screw. 5-7 lbf•in ( 0.55-0.8 N•m)  

CPV362MF Features

• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve

CPV362MK General Description

The IGBT technology is the key to International Rectifier's advanced line of IMS Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to power applications and where space is at a premium.

These new short circuit rated devices are especially suited for motor control and other totem-pole applications requiring short circuit withstand capability.

CPV362MK Maximum Ratings

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC  = 25 Continuous Collector Current each IGBT 5.7 A
IC @ TC = 100 Continuous Collector Currenteach IGBT 3.0 A
ICM Pulsed Collector Current 11 A
ILM Clamped Inductive Load Current 11 A
IF @ TC = 100 Diode Continuous Forward Current 3.4 A
IFM Diode Maximum Forward Current 11 A
tsc Short Circuit Withstand Time 10 µs
VGE Gate-to-Emitter Voltage ±20 V
VISOL Isolation Voltage, any terminal to case, 1 min 2500 VRMS
PD @ TC = 25 Maximum Power Dissipation, each IGBT 23 W
PD @ TC = 100 Maximum Power Dissipation, each IGBT 9.1 W
TJ
TSTG
Operating Junction and
Storage Temperature Range
-40 to +150
  Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
  Mounting torque, 6-32 or M3 screw. 5-7 lbf?in ( 0.55-0.8 N?m)  

CPV362MK Features

• Short Circuit Rated - 10µs @ 125, V GE = 15V Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve

CPV362MM General Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to power applications and where space is at a premium.

CPV362MM Maximum Ratings

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC  = 25°C Continuous Collector Current each IGBT 7.9 A
IC @ TC = 100 Continuous Collector Currenteach IGBT 4.6 A
ICM Pulsed Collector Current 16 A
ILM Clamped Inductive Load Current 16 A
IF @ TC = 100 Diode Continuous Forward Current 3.4 A
IFM Diode Maximum Forward Current 16 A
tsc Short Circuit Withstand Time 10 µs
VGE Gate-to-Emitter Voltage ±20 V
VISOL Isolation Voltage, any terminal to case, 1 min 2500 VRMS
PD @ TC = 25 Maximum Power Dissipation, each IGBT 23 W
PD @ TC = 100 Maximum Power Dissipation, each IGBT 9.1 W
TJ
TSTG
Operating Junction and
Storage Temperature Range
-40 to +150
  Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
  Mounting torque, 6-32 or M3 screw. 5-7 lbf?in ( 0.55-0.8 N?m)  

CPV362MM Features

• Short Circuit Rated - 10µs @ 125, V GE = 15V Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve

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