MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:08+
FCP11N60C, FCP11N60F, FCP12A Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-220
D/C: 08+
Description: MOSFET N-CHAN 600V TO-220
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PDF/DataSheet Download
Datasheet: FCP11N60
File Size: 829872 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FCP11N60F
File Size: 856793 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FCP12A
File Size: 152823 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
| Technical/Catalog Information | FCP11N60F |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 5.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1490pF @ 25V |
| Power - Max | 125W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 52nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FCP11N60F FCP11N60F |
SuperFETTM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
|
Symbol |
Parameter |
FCP11N60F |
FCPF11N60F |
Units | |
| ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL |
Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
(Note 1) (Note 2) (Note 1) (Note 1) (Note 3) |
11 7 33 ± 30 |
11 * 7 * 33 * |
A A A V mJ A mJ V/ns W W/°C °C °C |
|
340 11 12.5 4.5 | |||||
|
125 1.0 |
36 * 0.29 * | ||||
|
-55 to +150 300 | |||||
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