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FCPF20N60, FCPF20N60S, FCPF7N60

Table of contents:
Info of FCPF20N60
Info of FCPF20N60S
Info of FCPF7N60

FCPF20N60, FCPF20N60S, FCPF7N60 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:N/A

FCPF20N60, FCPF20N60S, FCPF7N60 Datasheet download

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Part Number: FCPF20N60

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: N/A

Description: MOSFET N-CHAN 600V 7A TO220F

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FCPF20N60 Parameters

Technical/Catalog Information	FCPF20N60
Vendor	Fairchild Semiconductor
Category	Transistors, FETs, IGBTs
Mounting Type	Through Hole
Package Name	TO-220 FullPAK
FET Type	N-Channel
Drain to Source Voltage (Vdss)	600.0 V [Nom]
Voltage Gate to Source (Vgs)	30.0 V [Max]
Continuous Drain Current (Id)	20.00 A [Nom]
Rds On (Max) @ Id, Vgs	190 mOhms @ 10A, 10V
Rds On (Typ) @ Id, Vgs	150 mOhms @ 10A, 10V
Input Capacitance (Ciss)	3080.0 pF @ 25.0 V
Gate Charge (Qg)	98.00 nC @ 10.0 V
Power Dissipation	39.000 W [Max]
Packaging	Tube
Protection Diode(s)	Drain to Source
Delay Time On	62.00 ns [Typ]
Delay Time Off	230.00 ns [Typ]
Rise Time	140.000 ns [Typ]
Fall Time	65.000 ns [Typ]
Vgs Min.	3.00 V @ 250.0 A
Vgs Max.	5.00 V @ 250.0 A
Drain Peak Current (Idm)	60.000 A [Nom]
Operating Junction Temperature	-55 °C [Min]
Operating Junction Temperature	150 °C [Max]
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FCPF20N60 FCPF20N60

FCPF20N60 General Description

SuperFETTM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

FCPF20N60 Maximum Ratings

Symbol	Parameter	FCP20N60	FCPF20N60	Units
V_DSS	Drain-Source Voltage	600		V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	20 12.5	20* 12.5 *	A A
I_DM	Drain Current - Pulsed (Note 1)	60	60 *	A
V_GSS	Gate-Source Voltage	± 30		V
E_AS	Single Pulsed Avalanche Energy (Note 2)	690		mJ
IAR	Avalanche Current (Note 1)	20		A
EAR	Repetitive Avalanche Energy (Note 1)	20.8		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5		V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	208 1.67	39 0.3	W W/°C
TJ, T_STG	Operating and Storage Temperature Range	-55to+150		°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300		°C

Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I_AS = 10A, V_DD = 50V, R_G = 25Ω, Starting T_J= 25°C
3. I_SD 20A, di/dt 200A/µs, VDD BVDSS, Starting T_J= 25°C
4. Pulse Test: Pulse width 300µs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics

FCPF20N60 Features

• 650V @T_J= 150°C
• Typ. RDS(on) = 0.15Ω
• Ultra low gate charge (typ. Qg = 75nC)
• Low effective output capacitance (typ. Coss.eff = 165pF)
• 100% avalanche tested

FCPF7N60 Parameters

Technical/Catalog Information	FCPF7N60
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	7A
Rds On (Max) @ Id, Vgs	600 mOhm @ 3.5A, 10V
Input Capacitance (Ciss) @ Vds	920pF @ 25V
Power - Max	31W
Packaging	Tube
Gate Charge (Qg) @ Vgs	30nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FCPF7N60 FCPF7N60

FCPF7N60 General Description

SuperFET^TM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

FCPF7N60 Maximum Ratings

Symbol	Parameter		FCP11N60F	FCPF11N60F	Units
V_DSS I_D I_DMV_GSSE_ASI_ARE_ARd_v/dtP_D T_J, T_STGT_L	Drain-Source Voltage	(Note 1) (Note 2) (Note 1) (Note 1) (Note 3)	600		V A A A V mJ A mJ V/ns W W/°C °C °C
	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)		7 4.4 21	7* 4.4* 21*
	Drain Current - Pulsed Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt		± 30 230 7 8.3 4.5
	Power Dissipation (TC = 25°C) - Derate above 25°C		83 0.67	31 0.25
	Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds		-55 to +150 300

FCPF7N60 Features

• 650V @TJ = 150°C
• Typ. RDS(on) = 0.53Ω
• Ultra low gate charge (typ. Qg = 25nC)
• Low effective output capacitance (typ. Coss.eff = 60pF)
• 100% avalanche tested

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