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FPD1000AS, FPD2000AS, FPD37M707QFP

FPD1000AS, FPD2000AS, FPD37M707QFP Selling Leads, Datasheet

MFG:RFIC  Package Cooled:N/A  D/C:Filtr

FPD1000AS, FPD2000AS, FPD37M707QFP Picture

FPD1000AS, FPD2000AS, FPD37M707QFP Datasheet download

Five Points

Part Number: FPD1000AS

 

MFG: RFIC

Package Cooled: N/A

D/C: Filtr

 

 

 
 
 
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  • FPD87208AXCVS NOPB

  • D/C: 01+&   Adddate: 2024-04-27
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  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
    (5)
  • FPD87314BBSAVJD

  • D/C: 03+& Qty: FAI  Adddate: 2024-04-27
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  • Action Dynamic   China
    Contact: Ms.AdaHuang   MSN:dn0755@hotmail.com
    Tel: 86-0755-83957495
    Fax: 86-0755-83987630
    (6)

About FPD1000AS

PDF/DataSheet Download

Datasheet: FPD1000AS

File Size: 546228 KB

Manufacturer: FILTRONIC [Filtronic Compound Semiconductors]

Download : Click here to Download

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FPD2000AS Suppliers

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  • FPD87208AXCVS NOPB

  • D/C: 01+&   Adddate: 2024-04-27
  • Inquire Now
  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
    (5)
  • FPD87314BBSAVJD

  • D/C: 03+& Qty: FAI  Adddate: 2024-04-27
  • Inquire Now
  • Action Dynamic   China
    Contact: Ms.AdaHuang   MSN:dn0755@hotmail.com
    Tel: 86-0755-83957495
    Fax: 86-0755-83987630
    (6)

About FPD2000AS

PDF/DataSheet Download

Datasheet: FPD2000AS

File Size: 287748 KB

Manufacturer: FILTRONIC [Filtronic Compound Semiconductors]

Download : Click here to Download

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FPD37M707QFP Suppliers

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  • FPD87208AXCVS NOPB

  • D/C: 01+&   Adddate: 2024-04-27
  • Inquire Now
  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
    (5)
  • FPD87314BBSAVJD

  • D/C: 03+& Qty: FAI  Adddate: 2024-04-27
  • Inquire Now
  • Action Dynamic   China
    Contact: Ms.AdaHuang   MSN:dn0755@hotmail.com
    Tel: 86-0755-83957495
    Fax: 86-0755-83987630
    (6)

About FPD10000AF

PDF/DataSheet Download

Datasheet: FPD10000AF

File Size: 190155 KB

Manufacturer: FILTRONIC [Filtronic Compound Semiconductors]

Download : Click here to Download

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FPD1000AS General Description

The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor(pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics.

Typical applications include drivers or output stages in PCS/Cellular base station transmitter amplifiers, as well as other power applications in WLL/WLAN amplifiers.

FPD1000AS Maximum Ratings

Parameter Symbol Test Conditions Min Max Units
Drain-Source Voltage VDS -3V < VGS < +0V   12 V
Gate-Source Voltage VGS 0V < VDS < +8V   -3 V
Drain-Source Current IDS For VDS > 2V    IDSS mA
Gate Current IG Forward or reverse current   +20/-20 mA
RF Input Power2 PIN Under any acceptable bias state   575 mW
Channel Operating Temperature TCH Under any acceptable bias state   175 ºC
Storage Temperature TSTG Non-Operating Storage -40 150 ºC
Total Power Dissipation PTOT See De-Rating Note below   6 W
Gain Compression Comp. Under any bias conditions   5 dB
Simultaneous Combination of Limits3   2 or more Max. Limits   80 %


1TAmbient = 22°C unless otherwise noted 2Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
• Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
• Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib.
• Power Dissipation defined as: PTOT (PDC + PIN) POUT, where
                                                   PDC: DC Bias Power
                                                   PIN: RF Input Power
                                                   POUT: RF Output Power
• Absolute Maximum Power Dissipation to be de-rated as follows above 22°C:
                                                   PTOT=3.5 - (0.04W/°C) x TPACK
where THS = heatsink or ambient temperature above 22°C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 85°C heatsink temperature: PTOT = 6.0 - (0.04 x (55 22)) = 4.68W
• For optimum heatsinking, metal-filled through (Source) via holes should be used directly below the central metallized ground pad on the bottom of the package.
• Note on Thermal Resistivity: The nominal value of 25°C/W is measured with the package mounted on a large heatsink with thermal compound to ensure adequate (unsoldered) contact. The package temperature is referred to the Source leads.
• HANDLING PRECAUTIONS

FPD2000AS General Description

The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor(pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics.

Typical applications include drivers or output stages in PCS/Cellular base station transmitterb amplifiers, as well as other power applications in WLL/WLAN amplifiers.

FPD2000AS Maximum Ratings

Parameter Symbol Test Conditions Min Max Units
Drain-Source Voltage VDS -3V < VGS < +0V   12 V
Gate-Source Voltage VGS 0V < VDS < +8V   -3 V
Drain-Source Current IDS For VDS > 2V   IDSS mA
Gate Current IG Forward or reverse current   +50/-2 mA
RF Input Power2 PIN Under any acceptable bias state   900 mW
Channel Operating Temperature TCH Under any acceptable bias state   175 ºC
Storage Temperature TSTG Non-Operating Storage -40 150 ºC
Total Power Dissipation PTOT See De-Rating Note below   7.6 W
Gain Compression Comp. Under any bias conditions   5 dB
Simultaneous Combination of Limits3   2 or more Max. Limits   80 %


1TAmbient = 22°C unless otherwise noted 2Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
• Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
• Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib.
• Power Dissipation defined as: PTOT (PDC + PIN) POUT, where
                                                   PDC: DC Bias Power
                                                   PIN: RF Input Power
                                                   POUT: RF Output Power
• Absolute Maximum Power Dissipation to be de-rated as follows above 22°C:
                                                   PTOT=7.6 - (0.05W/°C) x TPACK
where THS = heatsink or ambient temperature above 22°C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 85°C heatsink temperature: PTOT = 7.6-(0.05*(55-22))=5.95W
• The use of a filled via-hole directly beneath the exposed heatsink tab on the bottom of the package is strongly recommended to provide for adequate thermal management. Ideally the bottom of the circuit board is affixed to a heatsink or thermal radiator.

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