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FPD13R51JY, FPD1500, FPD1500SOT89

FPD13R51JY, FPD1500, FPD1500SOT89 Selling Leads, Datasheet

MFG:FUJITSU  D/C:2001

FPD13R51JY, FPD1500, FPD1500SOT89 Picture

FPD13R51JY, FPD1500, FPD1500SOT89 Datasheet download

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Part Number: FPD13R51JY

 

MFG: FUJITSU

Package Cooled:

D/C: 2001

 

 

 
 
 
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  • FPD87208AXCVS NOPB

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About FPD10000AF

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Datasheet: FPD10000AF

File Size: 190155 KB

Manufacturer: FILTRONIC [Filtronic Compound Semiconductors]

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    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
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  • FPD87314BBSAVJD

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About FPD1500DFN

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Datasheet: FPD1500DFN

File Size: 238639 KB

Manufacturer: FILTRONIC [Filtronic Compound Semiconductors]

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FPD1500SOT89 Suppliers

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  • FPD87208AXCVS NOPB

  • D/C: 01+&   Adddate: 2024-03-29
  • Inquire Now
  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
    (5)
  • FPD87314BBSAVJD

  • D/C: 03+& Qty: FAI  Adddate: 2024-03-29
  • Inquire Now
  • Action Dynamic   China
    Contact: Ms.AdaHuang   MSN:dn0755@hotmail.com
    Tel: 86-0755-83957495
    Fax: 86-0755-83987630
    (6)

About FPD1500SOT89

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Datasheet: FPD1500SOT89

File Size: 531404 KB

Manufacturer: FILTRONIC [Filtronic Compound Semiconductors]

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FPD1500 Maximum Ratings

SeriesFPD
Frequency (MHz)1000 to 18,000
Gain (dB)9
OP1dB (dBm)29
OIP3 (dBm)41
Eff (%)35
Id (mA)465
Package/Size (Dim in mm)Bare Die

FPD1500SOT89 General Description

The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 x 1500 m Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels. The FPD1500 is available in die form and in other packages. Typical applications include drivers or output stages in PCS/Cellular base station high-intercept-point LNAs, WLL and WLAN systems, and other types of wireless infrastructure systems.

FPD1500SOT89 Maximum Ratings

Parameter Symbol Test Conditions Min Max Units
Drain-Source Voltage VDS -3V < VGS < +0V   8 V
Gate-Source Voltage VGS 0V < VDS < +8V   -3 V
Drain-Source Current IDS For VDS > 2V   IDSS mA
Gate Current IG Forward or reverse current   15 mA
RF Input Power2 PIN Under any acceptable bias state   350 mW
Channel Operating Temperature TCH Under any acceptable bias state   175 ºC
Storage Temperature TSTG Non-Operating Storage -40 150 ºC
Total Power Dissipation PTOT See De-Rating Note below   2.3 W
Gain Compression Comp. Under any bias conditions   5 dB
Simultaneous Combination of Limits3   2 or more Max. Limits   80 %


1TAmbient = 22°C unless otherwise noted 2Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
• Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
• Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib.
• Power Dissipation defined as: PTOT (PDC + PIN) POUT, where
                                                   PDC: DC Bias Power
                                                   PIN: RF Input Power
                                                   POUT: RF Output Power
• Absolute Maximum Power Dissipation to be de-rated as follows above 22°C:
                                                   PTOT=2.3W (0.015W/°C) x TPACK
where THS = heatsink or ambient temperature above 22°C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 85°C heatsink temperature: PTOT = 2.3W (0.015 x (65 22)) = 1.66W

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