GA100TS60U, GA100TX02MZA, GA100TX03MZ Selling Leads, Datasheet
MFG:IR D/C:07+
GA100TS60U, GA100TX02MZA, GA100TX03MZ Datasheet download
Part Number: GA100TS60U
MFG: IR
Package Cooled:
D/C: 07+
GA100TS60U, GA100TX02MZA, GA100TX03MZ
- Table of contents:
Info of GA100TS60U
Info of GA100TX02MZA
Info of GA100TX03MZ
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About GA100TS60U
PDF/DataSheet Download
Datasheet: GA100TS60U
File Size: 221303 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About GA100
PDF/DataSheet Download
Datasheet: GA100
File Size: 207027 KB
Manufacturer: MICROSEMI [Microsemi Corporation]
Download : Click here to Download
About GA100
PDF/DataSheet Download
Datasheet: GA100
File Size: 207027 KB
Manufacturer: MICROSEMI [Microsemi Corporation]
Download : Click here to Download
GA100TS60U Maximum Ratings
|
Parameter |
Max. |
Units | |
|
VCES |
Collector-to-Emitter Voltage |
600 |
V |
|
IC @ TC = 25 |
Continuous Collector Current |
100 |
A |
|
ICM |
Pulsed Collector Current |
200 | |
|
ILM |
Clamped Inductive Load Current |
200 | |
| IFM | Diode Maximum Forward Current |
200 | |
|
VGE |
Gate-to-Emitter Voltage |
±20 |
V |
| VISOL | RMS Isolation Voltage, Any Terminal To Case, t = 1 min |
2500 | |
|
PD @ TC = 25 |
Maximum Power Dissipation |
320 |
W |
|
PD @ TC = 85 |
Maximum Power Dissipation |
170 | |
|
TJ |
Operating Junction Temperature Range |
-40 to +150 |
|
|
TSTG |
Storage Temperature Range |
-40 to +125 |
GA100TS60U Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard
switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL recognition pending
• Generation 4 IGBT technology
switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL recognition pending
• Generation 4 IGBT technology
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